Newly developed ultra low CTE materials for thin core PKG

Abstract

To achieve the recent improvements in miniaturization and performance of mobile devices (Smart phone, Tablet PC etc.), the semiconductor PKG substrate installed in these devices is demanded to be thinner and higher in density. However, the thinner PKG substrate may cause poor connection reliability due to increased warpage by soldering. The ultra low CTE (Coefficient of thermal expansion) core material has been required as the key solution for the reduction of the warpage of the thinner PKG substrate such as PoP (Package on package).We have just developed two types of ultra low CTE core materials named E-705G and E-800G to meet with the requirement, applying our original resin systems and the filler surface treatment technologies.The developed materials show the ultra low CTE(X,Y) property (2.8-3.3 ppm/ o C) similar to that of glass fabric itself. Also E-705G has high flexural modulus over 33-36 GPa at room temperature. Regarding E-800G, it has the good dielectric characteristics (lower dielectric constant and dissipation factor), can be applicable higher speed PKG. Both of the materials have high reliability and high heat resistance which is suitable for the lead-free soldering process.Confirming the warpage property, we evaluated the warpage behavior of PoP (bottom) constructions before/after assembly process. The newly developed materials showed the much lower warpage than the conventional low CTE material.

Ultra low CTE (1.8 ppm/°C) core material for next generation thin CSP

“…We have already developed two types of technical concepts for the further ultra low CTE (type A and type B) [1].…”

Ultra low loss build-up film for fine pitch applications

“…The transmission loss is needed to be reduced in the view point of signal integrity. Moreover, as package substrates utilized in smart phones and tablet PCs will be thinner, the high elastic modulus and the low CTE are necessary to reduce the warpage [2]. In this paper, we report a study on improvement of Dk/Df property and the newly developed build-up film with ultra-low loss (low Dk and low Df) and good compatibility with SAP.…”