New Write-Once Medium with NiO_x Film Using Blue Laser

Abstract

Both a new write-once medium with a sputtered NiO x film and a write-once optical disk using a blue laser has been fabricated. The optical constant of sputtered NiO x films for different ratios of O2/Ar was determined, and showed little dependence on sputtering ratios of O2/Ar and wavelength. The X-ray photoelectron spectra (XPS) data indicated those films have two major components, NiO and Ni2O3. Most NiO x films released oxygen gradually below 300°C. Over 300°C, there was an apparent transition due to the decomposition of the Ni2O3. At a writing power of 12 mW and a reading power of 0.5 mW under conditions of a numerical aperature (NA) of 0.65 and a wavelength of 405 nm, the carrier to noise ratio (CNR) was more than 47 dB and jitter was less than 13%. The recording principle depends primarily on the explosive pressure of the O2 released due to laser heating of the NiO x film.

Nanostructured mesoporous nickel oxide thin films

“…This suggests that Ni 2 O 3 turns into NiO when the film is annealed. A similar mechanism of transformation has been reported by Chang et al for sputtered films [29]. The colour of the as-deposited film in this work is dark brown, and it becomes more and more transparent with increase in annealing temperature.…”

Microstructure and recording mechanism of Bi–Fe–(N) layer for high-density write-once optical disk

“…Hence, the formation of nitrogen gas bubbles caused by the decomposition of nitrides in recorded marks was expelled from the recording mechanism of Bi-Fe-͑N͒ disk samples. 14,21,22 In summary, we demonstrate the feasibility of Bi-Fe-͑N͒ layer as the recording media in HD DVD-R optical disks. PRSNR of 21.1 and sbER of 5 ϫ 10 −7 were achieved at P w = 5.7 mW in the optimized disk sample.…”

Metastable oxygen incorporation into thin film NiO by low temperature active oxidation: Influence on hole conduction

“…36 This observation is qualitatively consistent with our results. In another study, it was proposed that the release of excess oxygen, which may be located between the grain boundaries in the film associated with Ni 3+ by a weak quadruple force, 37 is responsible for decreasing in hole concentration, and in turn the increase in the resistance below 573 K. 38 The results of the XPS measurements before and after UV treatment ͑7200 s at 310 K͒ are shown in Fig. 4.…”