New Ultra-High-Frequency Plasma Source for Large-Scale Etching Processes

Samukawa, Seiji; Nakagawa, Yukito; Tsukada, Tsutomu; Ueyama, Hiroyuki; Shinohara, Kazunori

doi:10.1143/jjap.34.6805

Cited by 63 publications

(12 citation statements)

References 6 publications

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“…[1][2][3][4][5][6][7] We have previously reported measurements of the absolute densities of Cl 2 , Cl, Cl 2 ϩ , Cl ϩ , and Ar ϩ in inductively coupled plasmas ͑ICPs͒ containing such mixtures; such measurements should be useful to investigations of the etch mechanism, rate, selectivity, and etched profile shapes. [8][9][10] Eddy et al have used a Langmuir probe to measure T e as a function of rf power and Ar fraction in Cl 2 -Ar electron cyclotron resonance discharges. The electron energy distribution function ͑EEDF͒ ͑and therefore T e ͒ can affect the undesirable etched profile anomalies, such as bowing and microtrenching, and electrical damage due to charge build-up and current flow, as have been observed in the etching of silicon device materials ͑e.g., Si and Al͒.…”

Section: Introductionmentioning

confidence: 99%

Electron temperatures of inductively coupled Cl2–Ar plasmas

Fuller¹,

Donnelly²,

Herman³

2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Ultrahigh frequency versus inductively coupled chlorine plasmas: Comparisons of Cl and Cl 2 concentrations and electron temperatures measured by trace rare gases optical emission spectroscopy Trace rare gases optical emission spectroscopy has been used to measure the electron temperature, T e , in a high-density inductively coupled Cl 2 -Ar plasma at 18 mTorr as function of the 13.56 MHz radio frequency power and Ar fraction. Only the Kr and Xe emission lines were used to determine T e , because of evidence of radiation trapping when the Ar emission lines were also used for larger Ar fractions. At 600 W ͑10.6 W cm Ϫ2 ͒, T e increases from ϳ4.0Ϯ0.5 eV to ϳ6.0Ϯ2.0 eV as the Ar fraction increases from 1% to 96%. In the H ͑inductive, bright͒ mode, T e , for a ''neat'' chlorine plasma ͑including 1% of each He/Ne/Ar/Kr/Xe͒ increases only slightly from ϳ3.8 to 4.0 eV as power increases from 450 to 750 W. This increase is much larger for larger Ar fractions, such as from ϳ4.0 to 7.3 eV for 78% Ar. Most of these effects can be understood using the fundamental particle balance equation.

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Section: Introductionmentioning

confidence: 99%

Electron temperatures of inductively coupled Cl2–Ar plasmas

Fuller¹,

Donnelly²,

Herman³

2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The most prominent feature is the strong absorbance band at 1100-1400 cm Ϫ1 , attributable to all CF x (xϭ1,2,3) stretching modes. 6 And it has been reported that C 2 F 4 gas chemistries suppress charge-up damage during etching processes. The CvC vibration is normally observed at 1600 cm Ϫ1 in organic compounds when the C is backbonded to H, but it is typical for the CvC stretch to shift to higher frequencies when the H atoms are replaced by F atoms.…”

Section: Resultsmentioning

confidence: 99%

Effects of fluorocarbon gas species on electrical conductivity and chemical structure of deposited polymer in SiO2 etching processes

Shimmura

Soda

Samukawa

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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High-aspect-ratio SiO 2 contact-hole etching is one of the key processes in the fabrication of ultralarge-scale integrated devices. However, there are many serious problems, such as charge-buildup damage, etching-stop, and microloading effects. Charge accumulation in high-aspect-ratio contact holes during etching is one of the main causes of these problems. In SiO 2 etching using fluorocarbon gases, it is well known that fluorocarbon film is deposited on the underlayer surface and sidewall of contact holes. It is expected that such deposited fluorocarbon polymer will exert a great influence on the etching characteristics and charge accumulation in SiO 2 contact holes. Therefore, it is necessary to measure the conductivity of the sidewall surfaces of contact holes with deposited fluorocarbon polymer. We made a monitoring device on a silicon wafer to evaluate the sidewall current of SiO 2 contact holes and determined the relationship between the chemical structure and electrical conductivity of the fluorocarbon films deposited in the contact holes as a function of fluorocarbon gases and incident ion flux. We found that the electrical conductivity of the sidewall surface in SiO 2 contact holes depends on the chemical structure of the deposited fluorocarbon polymer. It was also clear that the chemical structure of the deposited fluorocarbon polymer depended on nature of the radical species and ion flux incident on the etching surface. These results indicate that by controlling the chemical structure of the deposited fluorocarbon polymer one may be able to mitigate the influence of charge accumulation.

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“…Recently, various discharge sources for large-area processing have been proposed, including inductively coupled plasma sources with multiple inductive antennas 1 or with antennas that launch traveling waves, 2 ECR plasma sources with plane slotted antennas and permanent magnets, 3 modified magnetron-typed radio-frequency ͑rf͒ plasma sources, 4 or ultra-high-frequency ͑UHF͒ plasma sources with spokewise antennas. 5 Recently Kim et al has proposed a new antenna configuration to produce uniform large-area ICPs, 6 using the parallel LC-resonance of the antenna ͑Resonant ICP or RICP͒. The antenna of this system consists of segmented coils, which are connected in parallel and tuned with an external variable capacitor as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%