New thin-film resistive memory

Simmons, J.G.; Verderber, R.R.

doi:10.1049/ree.1967.0069

Cited by 52 publications

(25 citation statements)

References 2 publications

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“…Non-volatile memory devices based on resistive switching characteristics have been studied since the late 1960s [1]. In these devices, application of an external bias potential across an electrolyte changes the electrical conductivity of the electrolyte by changing its structure.…”

Section: Introductionmentioning

confidence: 99%

Structural origins of electronic conduction in amorphous copper-doped alumina

Subedi

Prasai

Kozicki

et al. 2019

Phys. Rev. Materials

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We perform an ab initio modeling of amorphous copper-doped alumina (a-Al2O3:Cu), a prospective memory material based on resistance switching, and study the structural origin of electronic conduction in this material. We generate molecular dynamics based models of a-Al2O3:Cu at various Cu-concentrations and study the structural, electronic and vibrational properties as a function of Cu-concentration. Cu atoms show a strong tendency to cluster in the alumina host, and metallize the system by filling the band gap uniformly for higher Cu-concentrations. We also study thermal fluctuations of the HOMO-LUMO energy splitting and observe the time evolution of the size of the band gap, which can be expected to have an important impact on the conductivity. We perform a numerical computation of conduction pathways, and show its explicit dependence on Cu connectivity in the host. We present an analysis of ion dynamics and structural aspects of localization of classical normal modes in our models.

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Section: Introductionmentioning

confidence: 99%

Structural origins of electronic conduction in amorphous copper-doped alumina

Subedi

Prasai

Kozicki

et al. 2019

Phys. Rev. Materials

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“…On the other hand, resistive switching phenomenon was discovered in amorphous silicon and silicon oxide more than 4 decades ago, and there is a revived interest in using these materials for memristors. [14][15][16][17][18][19][20][21][22][23][24][25] Although compatible with CMOS technologies regarding materials and process, the reported programming voltages for silicon oxides based devices were too high (from 3.5 to 13 V) 19,23,24 thus incompatible with the state-of-the-art lowpower CMOS transistors in electrical operation.…”

mentioning

confidence: 99%

Low voltage resistive switching devices based on chemically produced silicon oxide

Jiang

Xia

2013

Applied Physics Letters

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We developed nonvolatile metal/SiOx/Si memristive devices based on ultrathin (∼1 nm) silicon oxide that was produced in a Piranha solution. The devices exhibited repeatable resistive switching behavior with low programming voltages (as low as 0.5 V) and high ON/OFF conductance ratio. Devices with active metals as top electrodes were bipolar switches, while those with inert metal electrodes were unipolar. We also studied the switching mechanisms for both types of devices based on the filament formation and rupture, and proposed conduction models for Pt/SiOx/Si devices.

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“…Memristors, theoretically predicted in 1971 and experimentally identified in 2008, [5][6][7] possess the analog nonvolatile memory feature and have been recognized as outstanding candidates toward artificial synapses. Memristors, theoretically predicted in 1971 and experimentally identified in 2008, [5][6][7] possess the analog nonvolatile memory feature and have been recognized as outstanding candidates toward artificial synapses.…”

Section: Selective Uv-gating Organic Memtransistors With Modulable Lementioning

confidence: 99%

Selective UV‐Gating Organic Memtransistors with Modulable Levels of Synaptic Plasticity

Zhong

Gao

et al. 2019

Adv Elect Materials

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Targeting the emulation of diverse synapses in the brain, organic thin‐film memtransistors gated remotely by UV light are achieved and analytically modeled. They show continuously and reversibly variable device states, and the degree of the variability can also be controlled by selective UV gating. The modulable memristive characteristics cover a wide range of four orders in reading current, all with excellent state retention upon reading or power‐off. The UV‐gating effect stems from the UV‐enhanced cumulative charge trapping/detrapping in the polymer electret layer, expressed as a linear relationship between the characteristic trapping frequency and UV power density. The organic memtransistors are utilized to successfully mimic various synapses at newborn, young, and mature stages that have different levels of synaptic plasticity, as well as the synaptic functions of paired‐pulse facilitation and paired‐pulse depression. The realization of versatile synaptic emulation in a single device may pave the way toward organic‐based neuromorphic circuits, where UV gating could be used for remote regulation of circuit learning rate.

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New thin-film resistive memory

Cited by 52 publications

References 2 publications

Structural origins of electronic conduction in amorphous copper-doped alumina

Structural origins of electronic conduction in amorphous copper-doped alumina

Low voltage resistive switching devices based on chemically produced silicon oxide

Selective UV‐Gating Organic Memtransistors with Modulable Levels of Synaptic Plasticity

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