1990
DOI: 10.1080/00207219008921200
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New technique for the offset compensation and noise reduction of MOSFET VLSI operational amplifiers

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Cited by 11 publications
(5 citation statements)
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“…From these measurements the values of the channel and oxide transconductances g mD , g mox and their dependence on the device biasing conditions and geometry are specified. The drain and gate currents can be formulated by [4][5][6][7] .…”
Section: Experimental and Simulation Resultsmentioning
confidence: 99%
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“…From these measurements the values of the channel and oxide transconductances g mD , g mox and their dependence on the device biasing conditions and geometry are specified. The drain and gate currents can be formulated by [4][5][6][7] .…”
Section: Experimental and Simulation Resultsmentioning
confidence: 99%
“…Each of these building blocks is constructed as shown in Fig. (3,a,b,) of two input driver MOSFET's T 1 , T′ 1 and T 4 , T′ 4 and two current sources T 2 , T ′ 2 , T 5 , T ′ 5 each pair of driver/source string T 1 , T 2 , T′ 1 , T ′ 2 and T 4 , T 5 , T ′ 4 , T′ 5 are connected in different configuration with a common mode negative feedback through T 3 and T 6 , respectively, to stabilize the currents and node voltages against any device mismatching, characteristics spreading, aging and/or temperature excursions.…”
Section: Architecturementioning
confidence: 99%
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“…Among them, some commonly used methods such as using the hot electron to modify the threshold voltages of input devices [3] need a special fabrication process, which may not be feasible in a standard process; and others as like using digital technology to implement automatic offset canceling [4] will occupy a large die area for incorporating active memory device.…”
Section: Offset Canceling Circuitmentioning
confidence: 99%