New substrates for MOEMS

Reiche, M.; Hiller, E.; Stolze, D.

doi:10.1109/icsens.2002.1037170

Cited by 8 publications

(4 citation statements)

References 4 publications

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“…The reason is the increasing width of the space charge region d s with increasing U C : and N D are the concentration of acceptors and donors, respectively,  H is the dielectric constant and e = 1.610 -19 As is the elementary charge. Diodes prepared on bonded hydrophobic wafer pairs result in dark currents equivalent or lower than for diodes prepared on the standard epitaxial material [114]. The increase of I d with increasing layer thickness corresponds to the results of SPICE simulation.…”

Section: Applications Of Hydrophobic Bonded Waferssupporting

confidence: 58%

Dislocation Networks Formed by Silicon Wafer Direct Bonding

Reiche

2008

MSF

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The paper reviews methods of hydrophobic wafer bonding. Hydrophobic surfaces are obtained by removing the oxide layer from the surfaces of crystalline silicon substrates. Bonding such surfaces causes the formation of a dislocation network in the interface. The structure of the dislocation network depends only on the misalignment (twist and tilt components). The different dislocation structures are discussed. Because wafer bonding offers a method to the reproducible formation of such networks, different applications are possible

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Section: Applications Of Hydrophobic Bonded Waferssupporting

confidence: 58%

Dislocation Networks Formed by Silicon Wafer Direct Bonding

Reiche

2008

MSF

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“…For reproducible generation of dislocation networks wafer bonding techniques were applied. These processes are compatible to CMOS technologies and are frequently applied to MOEMS fabrication [5]. Hydrophobic bonding is used to realize defined dislocation arrangements.…”

Section: Methodsmentioning

confidence: 99%

Dislocation-Induced Light Emission

Reiche¹,

Kittler²,

Wilhelm³

et al. 2006

ECS Trans.

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Hydrophobic wafer bonding causes the formation of dislocation networks in the bonded interface. The structure of the dislocation network depends on the misorientation between both wafers during the bonding. The characterization of the dislocation networks proved that the luminescence depends only on the structure of the dislocation network. Different degrees of misorientation cause that different lines in the PL- and CL- spectra appear. This makes it possible to construct monochromatic light sources.

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“…Using wafer bonding and thinning techniques wafers of the same conduction type but different resistivity are paired to produce stacks in analogy to epitaxial wafers. Combinations of n-type, medium doped substrates (corresponding to a resistivity value ρ = 10 20 Ωcm) with a low-doped (ρ = 500 Ωcm) wafer of the same conduction type (n-), acting as top layer after thinning, were used to fabricate low-capacity and high-speed photodiodes (pin-diodes) [53]. Properties of pin-diodes (dark current, photocurrent, CV-characteristics, rise time) were measured showing a comparable or improved behaviour to analogous devices prepared on conventional epitaxial material.…”

Section: Hydrophobic Bonded Wafers -Hybrid Orientation Composites (Hot)mentioning

confidence: 99%

Wafer bonding in silicon electronics

Reiche

2009

Phys. Status Solidi (c)

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Semiconductor wafer bonding offers a new degree of freedom in the design of material combinations without the common restrictions of the structure of the materials bonded. It is already an established method for the industrial production of advanced substrates (SOI) applied as basic material in high‐performance device fabrication. SOI, i.e. a thin device layer on an insulator, is a promising concept for further device developments. The advantages of SOI can be combined with mobility enhancing materials such as strained silicon (SSOI) or germanium on insulator (GOI). The bonding process is not limited to a certain wafer diameter and is applicable to different material combinations which are important to integrate different functions on a chip (system on a chip, SoC). (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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New substrates for MOEMS

Cited by 8 publications

References 4 publications

Dislocation Networks Formed by Silicon Wafer Direct Bonding

Dislocation Networks Formed by Silicon Wafer Direct Bonding

Dislocation-Induced Light Emission

Wafer bonding in silicon electronics

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