2015
DOI: 10.1063/1.4919059
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New strain states and radical property tuning of metal oxides using a nanocomposite thin film approach

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Cited by 38 publications
(59 citation statements)
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References 19 publications
(24 reference statements)
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“…A broad range of researchers utilize the so-called domain matching epitaxy (DME) to synthesize large lattice mismatch systems, wherein the epitaxial growth of thin films is achieved by matching the domains with integral multiples of major lattice planes matching across the interface. [64][65][66][67][68] This growth technique is one way of achieving semi-coherent interfaces as it can be applied to systems having mismatch larger than 7%. Experimental evidence of misfit dislocations at various oxide heterointerfaces is provided in Figure 2.…”
Section: Semi-coherent Complex Oxide Heterostructures and Misfit Dislmentioning
confidence: 99%
“…A broad range of researchers utilize the so-called domain matching epitaxy (DME) to synthesize large lattice mismatch systems, wherein the epitaxial growth of thin films is achieved by matching the domains with integral multiples of major lattice planes matching across the interface. [64][65][66][67][68] This growth technique is one way of achieving semi-coherent interfaces as it can be applied to systems having mismatch larger than 7%. Experimental evidence of misfit dislocations at various oxide heterointerfaces is provided in Figure 2.…”
Section: Semi-coherent Complex Oxide Heterostructures and Misfit Dislmentioning
confidence: 99%
“…[54][55][56] While the growth of laterally aligned heteroepitaxy films is complicated and slow due to the need for layer-by-layer growth and perfection of each layer to maintain good heteroepitaxy, VAN films can be grown in a short time since one ablation of the target releases both species simultaneously. Furthermore, epitaxy does not degrade with thickness because vertical epitaxy dominates the growth, 61,63,[72][73][74] independent of the substrate. This permits entirely new strain states to be realized with elastic constants and thermal expansion constants of the phases playing strong roles.…”
Section: Growth Mechanisms Of Van Filmsmentioning
confidence: 99%
“…86,87 On the other hand, in VAN films comprising ionically conducting SDC nanopillars, the crystallinity of the SDC phase is much enhanced. 50,56 The reason for the enhanced crystallinity in VAN films is related to the large area vertical heteroepitaxy along many interfaces, 73 contrasting with the single interface formed in a planar film. Full understanding of the uniform strain and defect reduction requires further basic studies.…”
Section: B Improved Crystallinity Of Ionic Conductorsmentioning
confidence: 99%
“…A paradigm shift in ferroelectrics toward miniaturization has come about because of the considerable interest in low energy consumption and nonvolatile nanoelectronics. The advances in the fabrication of ferroelectric structures in the nanometer range have brought to life new physical phenomena and encouraged unique combinations of functionalities . Ba 0.6 Sr 0.4 TiO 3 (BSTO) is a ferroelectric of topical interest, since it exhibits a wide variety of functional properties, including switchable polarization, piezoresponse, electro‐optical behavior, tunability, and nonlinear dielectric behavior.…”
Section: Introductionmentioning
confidence: 99%
“…A key reason for this is that the interfaces of the ferroelectric nanostructures in the films are epitaxially coupled to a second scaffold phase in the film. In such films, there is strong vertical strain that causes a strong enhancement of Curie temperature, enhanced dielectric tunability, reduced dielectric loss and leakage current, and, finally, enhanced saturation polarization . On the other hand, in these promising nanocomposite ferroelectrics neither the extent of polarization nor the polarization retention has been systematically studied.…”
Section: Introductionmentioning
confidence: 99%