New Silicon Frontiers: Physically Flexible System-On-A-Chip

Chaney, Richard L.; Wilson, Dale G.; Hackler, D.; DeGregorio, K.; Leber, Darrell E.

doi:10.1109/wmed.2017.7916930

Cited by 2 publications

(3 citation statements)

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“…Furthermore, the massive production of the thinned chips could also imply a cost reduction. [31,87] To further reduce the thickness of thinned Si chips, SOIbased RF MOSFETs chips by using BOX as their etch-stop layer were also studied. [45,66,84,85,88] In this method, after thinning the Si handling substrate of SOI down to ≈20-50 µm, the remaining Si substrate can be removed using selective etchants like XeF 2 with the front side protected.…”

Section: Si Microwave Flexible Transistorsmentioning

confidence: 99%

“…Si complementary metal-oxide-semiconductor (CMOS) integrated circuit (IC), reproduced with permission. [31] Copyright 2017, IEEE. Systems: smart contact lens, reproduced under the terms of the Creative Commons Attribution 4.0 International License.…”

Section: Flexible Microwave Transistors Based On Conventional Semiconmentioning

confidence: 99%

“…[259,260] Figure 9f shows a photograph of a wafer scale ultrathin flexible CMOS circuits based on 130 nm node SOI technology. [31] A large variety of ICs including analog-to-digital converters, GHz RFID chips, sensor tag ICs, and low-power Bluetooth chips have been made into flexible form with this technology, [259] indicating the application potential in low-power applications like wireless sensing system, RFID tag, low-power wearable communication systems, and IoT. The flexible semiconductor on polymer chips exhibits full functionality at a radius of curvature less than 5 mm.…”

Section: Circuit-first Approachmentioning

confidence: 99%

See 2 more Smart Citations

Flexible and Stretchable Microwave Electronics: Past, Present, and Future Perspective

Zhang

Lan

Qiu

et al. 2020

Adv Materials Technologies

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2000759 (6 of 38) www.advmattechnol.de Figure 4. Flexible microwave transistors. a) Schematic illustration of fabrication process flow of flexible microwave TFTs based on Si nanomembrane. Left, two-step transfer-printing of Si nanomembrane on flexible substrate with assist of PDMS stamp. Right, direct flip-printing Si nanomembrane on flexible substrate. Reproduced with permission. [72] Copyright 2010, Wiley-VCH. b) Flexible microwave Si TFT using direct flip-printing approach in (a). Reproduced under the terms of the Creative Commons Attribution 4.0 International License. [75] Copyright 2016, Springer Nature. c) Flexible microwave Si TFT using two-step approach in (a). Reproduced with permission. [72] Copyright 2010, Wiley-VCH. d) Cross-section SEM image of flexible Si MOSFET made by thinning a 65 nm node SOI wafer. Reproduced with permission. [45] Copyright 2013, American Institute of Physics. e) Optical images of flexible GaAs HBT on cellulose nanofibril (CNF) substrate. Reproduced under the terms of the Creative Commons Attribution 4.0 International License. [90] Copyright 2015, Springer Nature. f) Schematic illustration and normalized on-state conductance (G/G 0), maximum transconductance (g m /g m0) of flexible InAs MOSFET with self-aligned gate. Reproduced with permission. [53] Copyright 2012, American Chemical Society. g) Cross-section schematic illustration and gain curves of flexible InGaAs/InAlAs HEMT as function of frequency under various bending conditions. Reproduced with permission. [91] Copyright 2013, American Institute of Physics. h) Output power density (P OUT), power gain (G P) and power-added efficiency (PAE) of the flexible GaN HEMT on thermal conductive tape with thermal conductivity of 1.6 W m −1 K −1. Reproduced with permission. [92] Copyright 2017, Wiley-VCH. i) Photography of AlGaN/GaN film grown on BN coated sapphire substrate and printed on flexible tape. Reproduced with permission. [19] Copyright 2017, Wiley-VCH. j) Cross-section schematic illustration of bottom gate flexible graphene FET (GFET). Reproduced with permission. [93] Copyright 2013, American Chemical Society. k) Cross-section schematic illustration of top gate flexible GFET with self-aligned gate configuration. Reproduced with permission. [94] Copyright 2014, American Chemical Society. l) High-frequency characteristics of flexible GFET with gate length of 50 nm. Reproduced with permission. [95] Copyright 2018, Wiley-VCH. m) Schematic illustration and gain curves of flexible microwave transistor based on MoS 2 as function of frequency. Reproduced with permission. [96] Copyright 2014, Springer Nature. n) High-frequency characteristics of flexible microwave transistor based on black phosphorus (BP) as function of frequency. Reproduced with permission.

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