New SiGe dielectrics grown at room temperature by low-energy ion beam oxidation and nitridation

Vancauwenberghe, O.; Hellman, Olof C.; Herbots, Nicole; Tan, W. J.

doi:10.1063/1.106122

Cited by 39 publications

(15 citation statements)

References 8 publications

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“…6 Several processes exist which have the potential to suppress this effect. Among those are thermal oxidation at about 500°C at high pressure ͑50-70 bar͒, 7 plasma-assisted oxidation, 8 ion beam deposition, 9 and anodic oxidation. 5 This paper presents a comparative study of oxides grown on epitaxial layers of SiGe by rapid thermal oxidation ͑RTO͒ at 1000°C in dry oxygen atmosphere for 3 min and by anodic oxidation.…”

mentioning

confidence: 99%

Enhanced Passivation of the Oxide/SiGe Interface of SiGe Epitaxial Layers on Si by Anodic Oxidation

Rappich

Sieber

Knippelmeyer

2001

Electrochem. Solid-State Lett.

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We have compared anodically and rapid-thermally oxidized thin SiGe epitaxial layers on silicon. X-ray photoelectron, Auger, and Fourier transform infrared spectroscopies show the existence of SiO 2 and Si-O-Ge for anodic oxides, whereas thermally grown oxides consist of pure SiO 2 . The spatially resolved distribution of the elements in the layer has been investigated by electron energy loss spectroscopy images at microtomed samples. Thermal oxidation leads to a pile-up of Ge at the oxide/SiGe interface and Ge outdiffusion into the Si substrate. The Ge profile in the strained SiGe lattice of epitaxial layers is not affected by applying the electrochemical oxidation treatment. This leads to a significant increase of the photoluminescence intensity due to a decrease of nonradiative recombination, i.e. to a decrease of defect states at the interfaces.Low thermal budget passivation of single crystals or thin epitaxial layers of SiGe is of great interest for device applications such as metal oxide semiconductors 1 or hetero field effect transistors. 2,3 Thermal oxidation leads to a relaxation of the strained epitaxially grown SiGe layer on Si substrate and to a segregation of Ge. 4,5 Furthermore, it has been found that Ge migration to the oxide/ semiconductor interface still occurs at 500°C. 6 Several processes exist which have the potential to suppress this effect. Among those are thermal oxidation at about 500°C at high pressure ͑50-70 bar͒, 7 plasma-assisted oxidation, 8 ion beam deposition, 9 and anodic oxidation. 5 This paper presents a comparative study of oxides grown on epitaxial layers of SiGe by rapid thermal oxidation ͑RTO͒ at 1000°C in dry oxygen atmosphere for 3 min and by anodic oxidation. ExperimentalThe anodic oxidation was performed in 0.04 M KNO 3 /0.3% H 2 O/ethylene glycol solution at room temperature up to a potential of 50 V between the sample and the platinum counter electrode. 5,10,11 The oxide thickness is defined by the applied voltage for a constant concentration of water ͑about 4-5 Å/V for 0.3% water 11 ͒. Afterward, the samples were annealed in forming gas at 450°C. The epitaxially grown strained SiGe layer was deposited at 550°C, had a thickness of about 46 nm, a Ge content of nominally 26%, and was protected by a 5 nm thick Si cap which was removed prior to the oxidation. The oxide thicknesses were on the order of 20 nm. The oxidized SiGe samples were characterized by high resolution transmission electron microscopy ͑HRTEM, Philips CM 30͒ electron spectroscopic imaging ͑ESI, JEOL 3010 with gatan imaging filter͒, Fourier transform infrared ͑FTIR, Perkin Elmer 2000͒, and pulsed photoluminescence spectroscopies. 12

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mentioning

confidence: 99%

Enhanced Passivation of the Oxide/SiGe Interface of SiGe Epitaxial Layers on Si by Anodic Oxidation

Rappich

Sieber

Knippelmeyer

2001

Electrochem. Solid-State Lett.

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“…The resistivity value for the plasma-oxidized films is found to lie in the range (5-9) × 10 14 cm and the breakdown field strength is calculated to be 6-9 MV cm −1 . However, the resistivity ((1-2) × 10 13 cm) and the breakdown strength (3-5 MV cm −1 ) for thermally oxidized Si 0.82 Ge 0.18 samples are found to be lower than those of plasma-oxidized samples.…”

Section: Resultsmentioning

confidence: 93%

“…Low-temperature oxidation of SiGe using ion beams [14], UV exposure [15], microwave ECR plasma [16,17], and RF plasma [18] without any Ge pile-up has been reported. We have also reported the growth of ultrathin SiGe oxides at a very low temperature (150-200 • C) using a non-ECR-mode microwave plasma [19,20].…”

Section: Introductionmentioning

confidence: 99%

Epitaxy, Modification of Electronic Structures, Overlayer-Substrate Reaction and Segregation in Ferromagnetic Co Films on Se-Treated GaAs(001) Surface

Nath

Maeda

Suzuki

et al. 2000

Jpn. J. Appl. Phys.

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The chemical state and the electrical properties of the interfaces of thin oxide films grown on strained Si 1−x Ge x layers using plasma and thermal oxidation have been studied in detail. X-ray photoelectron spectroscopy studies show no Ge pile-up at the oxide/substrate interface. In the case of plasma oxidation, Ge at the oxide surface is found to be in a fully oxidized state, while the formation of an intermediate oxidized state is observed in the case of low-temperature thermal oxidation. High-frequency (1 MHz) capacitance-voltage (C-V ) and conductance-voltage (G-V ) measurements have indicated the growth of good quality gate oxides. The fixed oxide charge and interface state densities are comparable to those of low-temperature-grown metal-oxide-semiconductor capacitors on Si with aluminium gates.

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“…Low temperature oxidation of SiGe using ion beam without any Ge pile-up has been reported [12]. However, the range of ion energies used in the oxidation may often be detrimental to induce damages or defects on the surface.…”

Section: Introductionmentioning

confidence: 99%

Liquid phase deposition silicon dioxide for surface passivation in SiGe metal-semiconductor-metal photodetectors

et al. 2007

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New SiGe dielectrics grown at room temperature by low-energy ion beam oxidation and nitridation

Cited by 39 publications

References 8 publications

Enhanced Passivation of the Oxide/SiGe Interface of SiGe Epitaxial Layers on Si by Anodic Oxidation

Enhanced Passivation of the Oxide/SiGe Interface of SiGe Epitaxial Layers on Si by Anodic Oxidation

Epitaxy, Modification of Electronic Structures, Overlayer-Substrate Reaction and Segregation in Ferromagnetic Co Films on Se-Treated GaAs(001) Surface

Liquid phase deposition silicon dioxide for surface passivation in SiGe metal-semiconductor-metal photodetectors

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