2008
DOI: 10.1007/s11172-008-0082-z
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New scandium rhodium boride Sc4Rh17B12 with a framework structure: synthesis, crystal structure, and properties

Abstract: The new scandium rhodium boride Sc 4 Rh 17 B 12 was synthesized by arc melting of the elements followed by annealing in inert atmosphere. The crystal structure of Sc 4 Rh 17 B 12 was solved using single crystal X ray diffraction data. The structure can be described as a three dimensional frame work formed by trigonal prisms [BRh 6 ] and [BRh 5 Sc] with isolated boron atoms inside the prisms and trigonal prisms [BRh 5 B] representing the coordination polyhedra of paired boron atoms. The temperature dependenc… Show more

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Cited by 2 publications
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“…La 2 Re 3 B 7 is metallic, as exhibited by the increase in resistivity with increasing temperature. The room-temperature resistivity, ρ 300 K , is ∼375 μΩ cm, which is comparable to the values observed for some other metal borides, including 121 μΩ cm for Mg 3 Rh 5 B 3 , ∼250 μΩ cm for Ru 7 B 3 , ∼320 μΩ cm for Mg 1– x RhB, and ∼420 μΩ cm for Sc 4 Rh 17 B 12 . The somewhat large residual resistivity (ρ 0 ≈ 100 μΩ cm) may be due to pitting in the crystal due to soaking it in dilute HCl to clean the excess flux from the surface.…”
Section: Resultssupporting
confidence: 74%
See 1 more Smart Citation
“…La 2 Re 3 B 7 is metallic, as exhibited by the increase in resistivity with increasing temperature. The room-temperature resistivity, ρ 300 K , is ∼375 μΩ cm, which is comparable to the values observed for some other metal borides, including 121 μΩ cm for Mg 3 Rh 5 B 3 , ∼250 μΩ cm for Ru 7 B 3 , ∼320 μΩ cm for Mg 1– x RhB, and ∼420 μΩ cm for Sc 4 Rh 17 B 12 . The somewhat large residual resistivity (ρ 0 ≈ 100 μΩ cm) may be due to pitting in the crystal due to soaking it in dilute HCl to clean the excess flux from the surface.…”
Section: Resultssupporting
confidence: 74%
“…The room-temperature resistivity, ρ 300 K , is ∼375 μΩ cm, which is comparable to the values observed for some other metal borides, including 121 μΩ cm for Mg 3 Rh 5 B 3 , 69 ∼250 μΩ cm for Ru 7 B 3 , 70 ∼320 μΩ cm for Mg 1−x RhB, 71 and ∼420 μΩ cm for Sc 4 Rh 17 B 12 . 72 The somewhat large residual resistivity (ρ 0 ≈ 100 μΩ cm) may be due to pitting in the crystal due to soaking it in dilute HCl to clean the excess flux from the surface. However, the large residual resistivity and small residual resistivity ratio (RRR = ρ 300 K /ρ 0 ≈ 3.75) may also indicate a high degree of intrinsic structural disorder (point defects) in the complex unit cell.…”
Section: ■ Experimental Methodsmentioning
confidence: 99%