2006
DOI: 10.1016/j.jssc.2006.01.041
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New representatives of the linear structure series containing empty Ga/Ge cubes in the Sm–Ga–Ge system

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Cited by 6 publications
(5 citation statements)
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“…They both consist of geometrically equivalent layers of defective BaAl 4 (of R □ MGe 2 composition), AlB 2 and α-Po type slabs stacked linearly along the c direction. 2,41 These layers are also energetically equivalent, and consequently no strong preference for one of the polytypes can be envisaged. Frequently, the structure of such compounds is sensitive to the crystallization conditions and small fluctuations of these may reverse the energetic preferences and at the same time give origin to stacking faults, twinnings or non-periodic structures; as an example the families of SiC, ZnS, CdI 2 , micas, etc.…”
Section: From R 2 Pdge 6 To R 2 Mge 6 Compounds: Crystallochemical Anmentioning
confidence: 99%
“…They both consist of geometrically equivalent layers of defective BaAl 4 (of R □ MGe 2 composition), AlB 2 and α-Po type slabs stacked linearly along the c direction. 2,41 These layers are also energetically equivalent, and consequently no strong preference for one of the polytypes can be envisaged. Frequently, the structure of such compounds is sensitive to the crystallization conditions and small fluctuations of these may reverse the energetic preferences and at the same time give origin to stacking faults, twinnings or non-periodic structures; as an example the families of SiC, ZnS, CdI 2 , micas, etc.…”
Section: From R 2 Pdge 6 To R 2 Mge 6 Compounds: Crystallochemical Anmentioning
confidence: 99%
“…x $2.2) [29], e-SmGa 6 [43], Sm 2 Ga 1.8 Ge 5.2 [44], Sm 4 Ga 5.24 Ge 5.76 [44] Ca 3 Au 6.61 Ga 4.39 [45], and YbGa 3.34 [46]. In addition to Ln:Ga (Ln ¼lanthanide) binary and Ln:Ag:Ga (Ln¼ lanthanide) ternary phases, complex GaGe-containing networks including YbGaGe Fig.…”
Section: Structurementioning
confidence: 99%
“…The two models oS 72 and mS 36 are also intimately related. In fact, they can be described as belonging to a homological series constructed by linear intergrowth of inhomogeneous segments of the defective BaAl 4 , AlB 2 , and α-Po structure types. , An alternative description was given by Grin, based on only two types of segments, AlB 2 and defective CeRe 4 Si 2 .…”
Section: Introductionmentioning
confidence: 99%
“…In these cases the total number of atoms per unit cell is coincident with the stoichiometric model, but a more correct general formula should be R 2 M 1– x Ge 6+ x , where x could be positive or negative. For R = Y, M = Ga both possibilities are realized; in fact, two compounds have been reported with these elements, a Ge-rich phase (Y 2 Ga 0.34 Ge 6.66 , oS 72, x = 0.66) and a Ge-poor one (Y 2 Ga 3 Ge 4 , mS 36, x = −2).…”
Section: Introductionmentioning
confidence: 99%