New quantum devices

Liu, H.C

doi:10.1016/s1386-9477(00)00135-1

Cited by 10 publications

(1 citation statement)

References 10 publications

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“…The two-dimensional electron gas (2DEG) of a modulation-doped GaAs/Ga 1-x Al x As heterostructure is readily formed in electronic devices such as high electron mobility transistor (HEMT) and quantum well infrared photodetector (QWIP) [1][2][3]. Studies of the energy levels, electron mobility and optical properties of 2DEG using analytical and numerical approaches have been reported in numerous studies [4][5][6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Self-Consistent Calculation of Semiconductor Heterojunctions Using Quantum Genetic Algorithm

Şahin

Tomak

2002

Int. J. Mod. Phys. B

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In this study, we have investigated the ground state energy level of electrons in modulation doped GaAs/AlxGa 1−x As heterojunctions. For this purpose, Schrödinger and Poisson equations are solved self consistently using quantum genetic algorithm (QGA). In this way, we have found the potential profile, the ground state subband energy and their corresponding envelope functions, Fermi level, and the amount of tunneling charge from barrier to channel region. Their dependence on various device parameters are also examined.

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Section: Introductionmentioning

confidence: 99%

Self-Consistent Calculation of Semiconductor Heterojunctions Using Quantum Genetic Algorithm

Şahin

Tomak

2002

Int. J. Mod. Phys. B

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Preparation and mechanical properties of well‐aligned and well‐oriented poly(vinyl alcohol) nanoribbon

Iwashita

Kotera

Nishino

2008

Polymers for Advanced Techs

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We report a novel, economical method of preparing well‐aligned and well‐oriented nanoribbons made of poly(vinyl alcohol) (PVA). The method requires no special equipment and easily produces nanoribbon. The structure of uniaxially drawn nanoribbon was investigated by polarized microscopy, polarized FT‐IR, and X‐ray diffraction, which showed high molecular and crystallite orientations. The well‐aligned PVA nanoribbon, measuring several tens of micrometer width and around 400 nm thickness, had a Young's modulus of 9 GPa and a tensile strength of 350 MPa. Copyright © 2008 John Wiley & Sons, Ltd.

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7.2.3 Quantum wires and nano rods based on CdSe and its alloys

Klingshirn¹

2013

Growth and Structuring

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New quantum devices

Cited by 10 publications

References 10 publications

Self-Consistent Calculation of Semiconductor Heterojunctions Using Quantum Genetic Algorithm

Self-Consistent Calculation of Semiconductor Heterojunctions Using Quantum Genetic Algorithm

Preparation and mechanical properties of well‐aligned and well‐oriented poly(vinyl alcohol) nanoribbon

7.2.3 Quantum wires and nano rods based on CdSe and its alloys

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