Sixth International Conference Metalorganic Vapor Phase Epitaxy
DOI: 10.1109/movpe.1992.664851
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New Precursor for Epitaxial Growth of Indium Phosphide Synthesis and vapor pressure studies

Abstract: MOVPE growth of InP by reaction of usual indium alkyls with phosphine displays different problems [ 11 : incomplete pyrolysis of phosphine, non volatile polymer deposit, hazardous manipulations of phosphine and trimethylindium, contamination of the epitaxial layers ...In view to substitute trimethylindium by a new organoindium precursor, trimethylindium-trimethylamine adduct was chosen. This is an addition compound between a Lewis acid, trimethylindium and a Lewis base, trimethylamine. Complex formation stabil… Show more

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