New Pixel Circuit Design Employing an Additional Pixel Line Insertion in AMOLED Displays Composed by Excimer Laser-Crystallized TFTs

Jin, Guanghai; Choi, Seong Hee; Kim, Moojin; Kim, Sung‐Chul; Song, J. H.

doi:10.1109/jdt.2012.2191533

Cited by 6 publications

(3 citation statements)

References 9 publications

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“…Noble silver (Ag) thin films are very attractive materials for applications in flexible optoelectronic devices such as optical scattering layer and reflective metal electrode [1,2]. Therefore, Ag films have been intensively studied as they are easy to produce and have unique optical properties [3,4].…”

Section: Introductionmentioning

confidence: 99%

Rapid Thermal Annealing at the Temperature of 650°C Ag Films on SiO₂ Deposited STS Substrates

Kim

2017

Appl. Sci. Converg. Technol.

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Flexible opto-electronic devices are developed on the insulating layer deposited stainless steel (STS) substrates. The silicon dioxide (SiO 2) material as the diffusion barrier of Fe and Cr atoms in addition to the electrical insulation between the electronic device and STS is processed using the plasma enhanced chemical vapor deposition method. Noble silver (Ag) films of approximately 100 nm thickness have been formed on SiO 2 deposited STS substrates by E-beam evaporation technique. The films then were annealed at 650 o C for 20 min using the rapid thermal annealing (RTA) technique. It was investigated the variation of the surface morphology due to the interaction between Ag films and SiO 2 layers after the RTA treatment. The results showed the movement of Si atoms in silver film from SiO 2. In addition, the structural investigation of Ag annealed at 650 o C indicated that the Ag film has the material property of p-type semiconductor and the bandgap of approximately 1 eV. Also, the films annealed at 650 o C showed reflection with sinusoidal oscillations due to optical interference of multiple reflections originated from films and substrate surfaces. Such changes can be attributed to both formation of SiO 2 on Ag film surface and agglomeration of silver film between particles due to annealing.

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Section: Introductionmentioning

confidence: 99%

Rapid Thermal Annealing at the Temperature of 650°C Ag Films on SiO₂ Deposited STS Substrates

Kim

2017

Appl. Sci. Converg. Technol.

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“…Among these various different methods of crystallizing the a-Si, an excimer laser annealing (ELA) has attracted much research interest as an alternative low-temperature processing method for the crystallization of a-Si films. Moreover, it has been reported that ELA resulted in high-quality polysilicon films, leading to significant improvement in the electrical characteristics of poly-Si TFTs [1]. However, during the phase transformation from liquid to solid in the laser crystallization, many protrusions are formed at the oxide/poly-Si interface, causing a very rough surface of polysilicon as compared with other crystallization processes [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Thin-Film Transistors Fabricated by the Excimer Laser-Annealed Amorphous Silicon in Ultralow Oxygen Concentrations

Lee

Kim

Jin

2017

JNanoR

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To integrate circuits into the organic light emitting diode displays, it is necessary to fabricate polycrystalline silicon (poly-Si) based thin-film transistors (TFTs) on the glass substrates. In this work we investigated the correlation between the electrical characteristics and the poly-Si morphology of the excimer laser annealed (ELA) TFTs in ultralow oxygen concentrations (~ ppm). The main feature of ELA poly-Si films is the protrusion at grain boundaries that makes the film surface rough. The surface roughness increases with an increasing oxygen concentration during the laser annealing and degrades the TFT characteristics in the on-state as well as the breakdown voltage of the gate insulator, while the off current is independent of process conditions. This result is attributed to the increased oxygen incorporation in the film in the case of an ELA process. Since oxygen increased the defect density in the polysilicon bandgap, controlling the oxygen concentrations in the process chamber helped to improve the performance of the ELA poly-Si TFTs. Based on these results, we discuss the relationship between performance of active matrix organic light emitting display panels and oxygen concentrations during ELA.

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“…Excimer lasers are powerful and versatile Lasing sources in the UV range of the electromagnetic spectra. Because of their high pulse energies, high average power, cold ablation and shorter wavelength [1,2], excimer lasers have countless applications, not only in the field of industrial manufacturing [3][4][5], but also in the field of scientific research [6,7] and medical treatment [8,9].…”

Section: Introductionmentioning

confidence: 99%

Freeform microlens array homogenizer for excimer laser beam shaping

2016

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We presented a novel technique to design microlens optical beam homogenizing system for excimer lasers. As a new approach by applying freeform surface microlens array, the homogenizer can yield somehow superior beam shaping results with larger but less microlens units than conventional method. With new concept and design, the diffraction effects at the microlens apertures can be reduced substantially. Large scale and highly uniform beam profile can be realized at a relative nearby working distance after beam shaping. This is hard to achieve by conventional method. Our design method takes the real spatial energy characteristics of the excimer laser beam as the design basis, and combined with feasible optimization method. The design method is demonstrated as a real instance based, on a 193 nm ArF excimer laser in our laboratory. Moreover, to verify the effectiveness of our method, the designed freeform microlens array homogenizer has been fabricated and tested experimentally. The experimental optical performance of the homogenizer coincides well with the theoretical simulation.

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New Pixel Circuit Design Employing an Additional Pixel Line Insertion in AMOLED Displays Composed by Excimer Laser-Crystallized TFTs

Cited by 6 publications

References 9 publications

Rapid Thermal Annealing at the Temperature of 650°C Ag Films on SiO₂ Deposited STS Substrates

Rapid Thermal Annealing at the Temperature of 650°C Ag Films on SiO₂ Deposited STS Substrates

Characteristics of Thin-Film Transistors Fabricated by the Excimer Laser-Annealed Amorphous Silicon in Ultralow Oxygen Concentrations

Freeform microlens array homogenizer for excimer laser beam shaping

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New Pixel Circuit Design Employing an Additional Pixel Line Insertion in AMOLED Displays Composed by Excimer Laser-Crystallized TFTs

Cited by 6 publications

References 9 publications

Rapid Thermal Annealing at the Temperature of 650°C Ag Films on SiO2 Deposited STS Substrates

Rapid Thermal Annealing at the Temperature of 650°C Ag Films on SiO2 Deposited STS Substrates

Characteristics of Thin-Film Transistors Fabricated by the Excimer Laser-Annealed Amorphous Silicon in Ultralow Oxygen Concentrations

Freeform microlens array homogenizer for excimer laser beam shaping

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About

Rapid Thermal Annealing at the Temperature of 650°C Ag Films on SiO₂ Deposited STS Substrates

Rapid Thermal Annealing at the Temperature of 650°C Ag Films on SiO₂ Deposited STS Substrates