New Phenomenon in Narrow Germanium<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mo>−</mml:mo><mml:mi>n</mml:mi></mml:math>Junctions

Esaki, L.

doi:10.1103/physrev.109.603

Cited by 1,453 publications

(423 citation statements)

References 6 publications

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“…1). Calculations by Seminario et al show that the relative angle between two benzene rings in each tolane molecule determines its conductivity, being maximum at 0°and minimum at 90° [5]. At 10 K, phenyl rings in the tolane molecules show very little tendency to rotate and perpendicular tolanes are more stable than parallel tolane molecules-giving rise to smaller conductivity; at 30 K, the tolane rings are able to freely rotate with respect to each other, allowing the tolane molecules to be planar at some instant in time, consequently reaching higher conductivity.…”

Section: Conductor-insulator Transition Caused By Molecular Conformationmentioning

confidence: 99%

“…The discovery of NDR in semiconductor diodes has opened a new chapter in semiconductor device physics and device development [5][6][7][8][9][10][11]. Through the use of NDR devices, circuits with complicated functions can be implemented with significantly fewer components [12][13][14][15][16][17].…”

Section: Ndr In Molecular Junctionsmentioning

confidence: 99%

“…Through the use of NDR devices, circuits with complicated functions can be implemented with significantly fewer components [12][13][14][15][16][17]. There are various NDR devices such as Esaki tunnel diode [5], Gunn effect diode [6], resonant tunneling diode [7], etc., caused by various physical mechanisms. For example, Gunn effect diode, also known as transferred electron diode, is given rise to by a fieldinduced transfer of conduction band electrons from a low energy, high mobility valley to higher energy, low mobility satellite valleys [8].…”

Section: Ndr In Molecular Junctionsmentioning

confidence: 99%

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Electronic transport of molecular systems

2002

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We report stable and reproducible switching and memory effects in self-assembled monolayers (SAMs). We demonstrate realization of negative differential resistance (NDR) and charge storage in electronic devices that utilize single redox-center-contained SAM as the active component; and compare the effects of various redox centers to switching and storage behavior. The devices exhibit electronically programmable and erasable memory bits with bit retention times greater than 15 min at room temperature. Ó

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Section: Conductor-insulator Transition Caused By Molecular Conformationmentioning

confidence: 99%

Section: Ndr In Molecular Junctionsmentioning

confidence: 99%

Section: Ndr In Molecular Junctionsmentioning

confidence: 99%

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Electronic transport of molecular systems

2002

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“…The height of the NDR peaks depends on tunnel resistance of 6-nm-thick SiO 2 and a surface area of the MoS 2 contacting the silicon channel. This mechanism for such NDR peaks feature is the same as a conventional tunnel diode, 26 except for existence of the tunnel barrier in our device instead of a depletion region.…”

mentioning

confidence: 74%

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

Nishiguchi

Castellanos-Gómez

Yamaguchi

et al. 2015

Applied Physics Letters

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We demonstrate a tunnel diode composed of a vertical MoS 2 /SiO 2 /Si heterostructure. A MoS 2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS 2 layers and p-type Si channel. The tunneling-current characteristics show multiple negative differential resistance features, which we interpret as an indication of different conduction-band alignments of the MoS 2 layers of different thicknesses. The presented tunnel device can be also used as a hybrid-heterostructure device combining the advantages of two-dimensional materials with those of silicon transistors. V C 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4927529] Downsizing of Si field-effect transistors (FETs) has allowed ever-advancing performance and integration of electrical circuits. The downsizing also provides Si with unique characteristics including band-gap opening, 1,2 energy-level quantization, 3,4 and valley splitting, 5,6 which open ways for fascinating applications, e.g., a resonant tunneling diodes, 3 a light emitting diodes, 6,7 and a tool for tunneling spectroscopy. 4 In particular, tunneling spectroscopy, which is typically done using a scanning tunneling microscopy (STM), provides not only information about energy quantization, not observable in conventional current characteristics of FETs, but also can be used to implement light emitting devices. 8 These approaches promise for "More than Moore," which expands functions of Si FETs and their circuits. However, since Si has indirect band gap and heavy electron mass, applications utilizing band-diagram engineering have limitations compared to compound semiconductors. Two-dimensional materials, on the other hand, have recently emerged as a candidate to substitute Si in "Beyond CMOS." With direct bandgaps and lighter electron masses, two-dimensional materials have attracted much attention because of their potential for electronic and optical applications as well as physics. The research on the twodimensional materials had been boosted by the pioneering works on graphene 9,10 and has covered other materials including transition-metal dichalcogenides MX 2 and black phosphorous. 11-13 These two-dimensional materials are composed of layers with strong in-plane bonds and with weak van der Waals force mediated interlayer interactions, making possible to exfoliate them into atomically thin layers. MoS 2 , one of the layered MX 2 materials, has been studied widely for various applications such as transistors, 14,15 photo sensors, 16,17 and valleytronics and spintronics devices. 18,19 In analogy with other two-dimensional materials, the band gap of MoS 2 is modulated by the number of MoS 2 layers, showing an indirect band gap of 1.28 eV in bulk that increases while reducing the number of layers. In the single-layer limit, MoS 2 exhibits a direct band gap of 1.9 eV, 20,21 promising for light-emitting diodes. 22,23 In any applications using two-dimensional ma...

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“…In that sense, quantum tunneling is a promising candidate for improving the operation conditions. The first functional device operated based on the tunneling mechanism was the well-known Esaki diode, which is effectively a heavily-doped pn junction [2]. More recently, tunneling field-effect transistors (TFETs) [3,4] have been investigated, with their operation relying on band-to-band tunneling controlled by a gate voltage.…”

Section: Introductionmentioning

confidence: 99%

Observation of Tunneling Effects in Lateral Nanowire pn Junctions

Purwiyanti¹,

Udhiarto²,

Moraru³

et al. 2014

MST

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As electronic device dimensions are continuously reduced, applied bias conditions significantly change and the transport mechanisms must be reconsidered. Tunneling devices are promising for scaled-down electronics because of expected high-speed operation and relatively low bias. In this work, we investigated the tunneling features in silicon-oninsulator lateral nanowire pn junction and pin junction devices. By controlling the substrate voltage, tunneling features can be observed in the electrical characteristics. We found that the minimum substrate voltage required for tunneling to occur in pn junctions is higher as compared with pin junctions. The main cause of these effects relies in the difference between the doping profiles, since the pn junctions contain a co-doped region, while the pin junctions contain an i-layer. AbstrakPengamatan Efek Penyaluran dalam Persimpangan pn Pengantar Ukuran Nano Lateral. Sebagaimana dimensidimensi peralatan elektronik secara terus-menerus berkurang ukurannya, kondisi-kondisi bias yang diaplikasikan secara signifikan berubah dan mekanisme pengangkutan harus dipertimbangkan kembali. Peralatan penyaluran menjanjikan alat elektronik yang berukuran lebih kecil dan ringan karena diharapkannya pengoperasian dengan kecepatan tinggi dan bias yang secara relatif rendah. Dalam penelitian ini, kami menyelidiki fitur-fitur penyaluran dalam persimpangan pn pengantar ukuran nano lateral silikon pada insulator dan alat-alat persimpangan berukuran jarum. Dengan mengendalikan tegangan substrat, fitur-fitur penyaluran dapat diamati dalam karakteristik-karakteristik listrik. Kami menemukan bahwa tegangan substrat minimum yang diperlukan untuk penyaluran untuk terjadi dalam persimpangan pn lebih tinggi dibandingkan dengan persimpangan berukuran jarum. Penyebab utama efek-efek ini mengandalkan pada perbedaan-perbedaan antara profil-profil dengan doping, karena persimpangan pn berisi daerah yang dico-doped, sementara persimpangan seukuran jarum berisi lapisan i.

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New Phenomenon in Narrow Germaniump−nJunctions

Cited by 1,453 publications

References 6 publications

Electronic transport of molecular systems

Electronic transport of molecular systems

Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

Observation of Tunneling Effects in Lateral Nanowire pn Junctions

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