2021
DOI: 10.1007/s10825-021-01702-x
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New p-type sp-based half-Heusler compounds LiBaX(X = Si, Ge) for spintronics and thermoelectricity via ab-initio calculations

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Cited by 9 publications
(3 citation statements)
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“…( 9), the M tot obtained is equal to 1 µB for CsCaZ (Z = Ge, Sn and Pb), which is in good agreement with the calculated results of Table IV. Moreover, the calculated M tot is in perfect accordance with available theoretical work performed on cubic ternary half-Heusler compounds LiBaX (X = Si, Ge), and GeNaZ (Z = Ca, Sr, and Ba) ternary half-Heusler alloys where their M tot is equal to 1µB [54,55]. It's also seen from Table IV that the total magnetic moment is mainly relative to the main group element (Ge / Sn /Pb) and to the interstitial region.…”
Section: Magnetic Propertiessupporting
confidence: 84%
“…( 9), the M tot obtained is equal to 1 µB for CsCaZ (Z = Ge, Sn and Pb), which is in good agreement with the calculated results of Table IV. Moreover, the calculated M tot is in perfect accordance with available theoretical work performed on cubic ternary half-Heusler compounds LiBaX (X = Si, Ge), and GeNaZ (Z = Ca, Sr, and Ba) ternary half-Heusler alloys where their M tot is equal to 1µB [54,55]. It's also seen from Table IV that the total magnetic moment is mainly relative to the main group element (Ge / Sn /Pb) and to the interstitial region.…”
Section: Magnetic Propertiessupporting
confidence: 84%
“…Discovery of Heusler alloys [1], has much interests that are paid due to very interesting properties and suitability for all kinds of potential applications [2] i.e. they have a conductive nature for the first one spin channel and semiconducting for the second spin channel leading to a possible use in the fields of spintronics [3,4], optoelectronics [5] and by existence of various intrinsic phenomena of magnetism to be utilized in magnetoelectronic devices like magnetic sensors and tunneling magneto-resistance (TMR), other hand, Heusler alloys have aroused a great interest as attractive candidate for future efficient thermoelectric (TE) materials [6][7][8] which will have an essential role in the realization of environment friendly technologies due to conversion of heat lost in electrical energy and reduced greenhouse gas emissions. The TE materials can be utilized into refrigeration devices for cooling applications as well as power generation devices.…”
Section: Introductionmentioning
confidence: 99%
“…The study carried out in this article concerns the determination of the structural, electrical, magnetic and thermoelectric properties of the double perovskite material Ba 2 GdReO 6 using the full potential linearized augmented plane wave (FP-LAPW) method with different approximations such as the generalized gradient approximation (GGA), GGA+U and GGA plus modified Becke-Johnson (GGA+mBJ) methods [32]. For the determination of thermoelectric properties, we have used a semiclassical Boltzmann transport theory and rigid band theory as implemented in BoltzTrap code [33], within the Wien2k program in order to evaluate series thermoelectric parameters such as Seebeck coefficient S, electrical conductivity, thermal conductivity and figure of merit ZT for this compound, which could indicate a suitable use of these double perovskite materials in spintronic and thermoelectric applications [34][35][36][37]. This paper can be divided in four sections: the calculation method is given in Sec.…”
Section: Introductionmentioning
confidence: 99%