New neutral cesium evaporation chamber and UHV suitcase

Bendler, B.; Barrahma, R.; Philipp, Patrick; Wirtz, Tom

doi:10.1002/sia.3518

Cited by 17 publications

(23 citation statements)

References 15 publications

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“…In order to achieve a sub‐monolayer deposit, the collector was rotated during the sputter‐deposition process at a speed of 0.003–0.006 rpm. After the sputter deposition, the collectors were transferred to an Ion‐Tof TOF 5 for analysis with a vacuum suitcase described in previous work . The analysis of the collector was performed with a Bi

_{3}^{+}

primary ion beam at an impact energy of 25 keV.…”

Section: Methodssupporting

confidence: 65%

Investigation of the depth‐profiling capabilities of the Storing Matter technique

Kasel

Wirtz

2015

J. Mass Spectrom.

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The so-called Storing Matter technique allows the matrix effect observed in secondary ion mass spectrometry to be successfully circumvented. We therefore investigate in this work the depth-profiling capabilities of the Storing Matter technique with a goal of developing protocols for quantitative depth profiles. The effect of the steps involved in the Storing Matter process on the main parameters such as the depth resolution and the dynamic range is studied experimentally and by simulations. A semi-automated process consisting of the sputter-deposition process on a rotating collector in the Storing Matter instrument followed by a complete analysis of the collector by secondary ion mass spectrometry is defined. This protocol is applied to depth profile a B implant in Si and a Sn/Zn multilayered sample, and the results are compared with those obtained with conventional secondary ion mass spectrometry.

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_{3}^{+}

primary ion beam at an impact energy of 25 keV.…”

Section: Methodssupporting

confidence: 65%

Investigation of the depth‐profiling capabilities of the Storing Matter technique

Kasel

Wirtz

2015

J. Mass Spectrom.

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“…Three different collectors with different coverages (obtained with total number of Ar + primary ions of 6.7 × 10 12 , 2.0 × 10 13 and 2.7 × 10 13 , respectively) were transferred to the analytical instrument under ultrahigh vacuum conditions using a dedicated suitcase. [5] The collector with the sputter-deposited PS and a PS reference sample was analysed with a ToF-SIMS instrument (ToF-SIMS V, ION-TOF, Münster, Germany). For the analysis, Bi 3 + cluster ions were used (impact energy of 25 keV, a pulsed primary ion current of 0.3 pA and a raster size of 100 × 100 μm 2 ).…”

Section: Methodsmentioning

confidence: 99%

Fragmentation of polystyrene during sputter deposition in the storing matter instrument

Turgut

Wirtz²,

Belmahi

et al. 2014

Surface & Interface Analysis

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19th International Conference on Secondary Ion Mass Spectrometry (SIMS), Jeju, SOUTH KOREA, SEP 29-OCT 04, 2013International audienceThe storing matter technique has been developed to get easier quantification in secondary ion mass spectrometry (SIMS) by decoupling the sputtering step from the analysis step. First, the matter is deposited in the submonolayer range on a collector that is analysed next by SIMS. Most work on the storing matter technique has been carried out for inorganic samples. The technique has also been applied successfully to organic samples. In this work, the fragmentation of polystyrene (PS) molecule deposited on silver (Ag) during storing matter deposition is investigated using static SIMS analysis with Bi-3(+) clusters. The fragmentation of PS at different coverages is studied by calculating the ratios of large-to-small peak intensities of fingerprint spectra. These ratios are compared with those obtained previously by the storing matter technique using Ar+ as analysis beam in time-of-flight-SIMS. Different degrees of fragmentation are observed with varying coverage, suggesting different sticking factors of fragments on the collector. Compared with Bi-3(+), the Ar+ projectile produces a higher amount of large fragments and is found to be better suited for the analysis of PS deposits on silver collectors. In both situations, C7H7+ is the major fragment in the mass spectra

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“…Owing to the poor sticking of Cs atoms on other cesium atoms, the real thickness of the Cs layer cannot be directly deduced from the deposition rate and the deposition time. Previous studies allow us to estimate the Cs thin film to be in the monolayer range 8…”

Section: Methodsmentioning

confidence: 99%

NanoSIMS50 imaging of thin samples coupled with neutral cesium deposition

Audinot¹,

Cabin-Flaman²,

Philipp³

et al. 2011

Surface & Interface Analysis

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Thanks to the 50 nm of lateral resolution of the NanoSIMS50, new fields of application have been opened to Secondary Ion Mass Spectrometry. The NanoSIMS50 imaging capabilities are however often hampered by the fact that, due to a high impact energy (16 keV) and normal incidence of the primary ion beam, the steady state is only reached after sputtering several nanometers (10-20 nm) of the sample. As a consequence, the secondary ion emission is very low during the sputtering of these first nanometers. This phenomenon, which is most pronounced for organic and biologic samples, induces artifacts of measurement. In a previous study, we have shown that negative secondary ion yields can be enhanced in Secondary Ion Mass Spectrometry (SIMS) by coupling the primary ion bombardment with a simultaneous neutral cesium deposition. As this method cannot be used directly on the NanoSIMS50, we propose here to perform SIMS analysis after a prior deposition of Cs 0 in a standalone UHV system. With this new method of analysis, organic thin films and proteins have been 3D monitored.

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New neutral cesium evaporation chamber and UHV suitcase

Cited by 17 publications

References 15 publications

Investigation of the depth‐profiling capabilities of the Storing Matter technique

Investigation of the depth‐profiling capabilities of the Storing Matter technique

Fragmentation of polystyrene during sputter deposition in the storing matter instrument

NanoSIMS50 imaging of thin samples coupled with neutral cesium deposition

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