New model of a common origin for trapped holes and anomalous positive charge in MOS capacitors

Roh, Yonghan; Trombetta, L.; Stathis, J. H.

doi:10.1016/0167-9317(93)90163-y

Cited by 28 publications

(13 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 8͑c͒ shows that the generation under 77 K is substantially reduced now. This result supports the early works, 5,14,34 which showed that hydrogen could play a major role in positive charge formation when their density was sufficiently high. For a given level of electron injection, the amount of injected holes should be insensitive to temperature, either.…”

Section: Effects Of Hydrogen At Room Temperaturesupporting

confidence: 91%

Effects of hydrogen on positive charges in gate oxides

Zhao

Zhang

2005

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inCharge trapping in alumina and its impact on the operation of metal-alumina-nitride-oxide-silicon memories: Experiments and simulations Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor Appl. Phys. Lett. 97, 193504 (2010); 10.1063/1.3508955Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect Positive charge formation in gate oxides is a main source for the instability of the state-of-the-art metal-oxide-semiconductor device. Despite past efforts, the relation between hydrogenous species and positive charges is not fully understood. In this work, the effects of hydrogen on positive charges will be investigated at both elevated temperature ͑e.g., 400°C͒ and room temperature. At 400°C, it is found that hydrogen can convert some defects into hole traps. Three different types of positive charges have been reported recently. They are as-grown hole traps, anti-neutralization positive charges ͑ANPC͒, and cyclic positive charges ͑CPC͒. Although an exposure to hydrogen at 400°C neutralizes all three, impacts of hydrogen on these three types of defects are markedly different. After the hydrogen-induced neutralization, the defect responsible for ANPC is fully recovered and is the same as that in a fresh device. In contrast, the defect for CPC is not fully recovered and can be reactivated easily by stresses. The as-grown hole trap can be converted to ANPC through hydrogenation. At room temperature, it will be shown that there are two parallel processes for forming positive charges. One involves hydrogen and the other is through hole trapping. The relative importance of these two depends on the relative density of hydrogen against that of holes.

show abstract

Section: Effects Of Hydrogen At Room Temperaturesupporting

confidence: 91%

Effects of hydrogen on positive charges in gate oxides

Zhao

Zhang

2005

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…In particular, oxides damaged by avalanche electron injection generated defects that could be repeatedly charged and discharged by the appropriate change of gate bias, whereas oxides damaged by avalanche hole injection generated defects that permanently annealed regardless of the gate bias. In other studies by Trombetta et al [7,9] and Freitag et al [6] it was found that the annealing behavior of defects generated by Fowler-Nordheim (FN) tunneling was polarity dependent. Most of the defects generated by Fowler-Nordheim tunneling with a positive gate bias could be repeatedly charged and discharged, whereas FN tunneling with a negative gate bias generated mostly defects whose charge state was not reversible.…”

Section: Introductionmentioning

confidence: 99%

“…These two defects are distinguished by their behavior following generation. It was suggested [6, 7,9] that the trapped hole is a defect located below the silicon bandgap and does not reversibly exchange charge with the silicon substrate. This defect is permanently removed by tunneling into the silicon valence band or by thermal emission to the SiO, valence band.…”

Section: Introductionmentioning

confidence: 99%

Evidence for two types of radiation-induced trapped positive charge

Freitag

Brown

Dozier

1994

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

New experimental evidence is presented that supports a model that assumes two distinguishable types of positive oxide charge following x-irradiation. Two new experiments have been performed designed to separate the annealing properties of the two types of trapped positive charge. It is found that one type of trapped positive charge can be permanently removed at room temperature using substrate hot electron injection. The second type of trapped positive charge is found to be stable at temperatures up to 160°C

show abstract

“…Next, we examine the role played by gate materials. The devices of Hf-stacks used in this work up to now have a TaN gate and it has been reported that metal gate can substantially enhance the stress-induced positive charging (37,38). The question is whether the process-induced positive charging is also substantially enhanced by metal gate.…”

Section: Impact Of Processingmentioning

confidence: 98%

Instability and Defects in Gate Dielectric: Similarity and Differences Between Hf-Stacks and SiO2

et al. 2007

View full text Add to dashboard Cite

To control gate leakage current, Hf-based dielectrics have been selected for replacing SiON. Hf-stacks generally suffer from more defects than SiO2. This work reviews the latest progress in the understanding of these defects and compares them with those in SiO2. Attention will be focused on the stress-induced negative charging and the process-induced positive charging. On the negative charging, difficulties for characterizing the highly unstable trapping in thin Hf-layers will be tackled. Key trap properties are determined, including capture cross sections, effective density and spatial location. It is found that the capture cross section of as-grown electron traps in Hf-stacks is similar to that of generated electron traps in SiO2. On process-induced positive charges, it will be shown that Hf-stacks and SiO2 also have common features, including a large sample-to-sample variation, mobile and fixed charges, and stability. Overall, Hf-stacks, especially nitrided, behave like an inferior or stressed SiO2.

show abstract

New model of a common origin for trapped holes and anomalous positive charge in MOS capacitors

Cited by 28 publications

References 7 publications

Effects of hydrogen on positive charges in gate oxides

Effects of hydrogen on positive charges in gate oxides

Evidence for two types of radiation-induced trapped positive charge

Instability and Defects in Gate Dielectric: Similarity and Differences Between Hf-Stacks and SiO2

Contact Info

Product

Resources

About