2015
DOI: 10.4236/graphene.2015.42004
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New Method for Producing Graphene by Magnetron Discharge in an Atmosphere of Aromatic Hydrocarbons

Abstract: This paper proposes the method of producing graphene sheets and carbon nanotubes with reactive magnetron sputtering in vapour by sublimation aromatic hydrocarbons (naphthalene) with a structure of the benzene rings in a more natural formation of graphene structures. The carbon grid of molecular structure of aromatic hydrocarbons coincides with the graphene of carbon grid. The article shows the method of obtaining carbon nanostructures. The graphene of peaks was observed with the vibrational mode (2D-zone) at a… Show more

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Cited by 4 publications
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“…Thus, the process parameters are very important for the deterministic growth of the two types of structures. 125,126 Different types of plasma systems such as magnetronbased [127][128][129] or inductively and capacitively coupled plasma-enhanced chemical vapour deposition have the features capable of satisfying the process requirements 130,131 In one of the typical processes (ICP-CVD, with a frequency of 13.56 MHz and a discharge power of about 1.0 kW, a mixture of CH 4 and H 2 in Ar was used), the growth was carried out in a plasma generated in the pressure range of 1-5 Pa, with a discharge power of about 700 W and using a DC bias of −60 V applied to the substrate. No external heating was used, and the plasma heating by the ion and electron irradiation generated the required graphene growth temperature (approx.…”
Section: Graphene Fabrication Using Icp Plasmamentioning
confidence: 99%
“…Thus, the process parameters are very important for the deterministic growth of the two types of structures. 125,126 Different types of plasma systems such as magnetronbased [127][128][129] or inductively and capacitively coupled plasma-enhanced chemical vapour deposition have the features capable of satisfying the process requirements 130,131 In one of the typical processes (ICP-CVD, with a frequency of 13.56 MHz and a discharge power of about 1.0 kW, a mixture of CH 4 and H 2 in Ar was used), the growth was carried out in a plasma generated in the pressure range of 1-5 Pa, with a discharge power of about 700 W and using a DC bias of −60 V applied to the substrate. No external heating was used, and the plasma heating by the ion and electron irradiation generated the required graphene growth temperature (approx.…”
Section: Graphene Fabrication Using Icp Plasmamentioning
confidence: 99%