2017
DOI: 10.1088/1361-6528/aa9ab1
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New method for MBE growth of GaAs nanowires on silicon using colloidal Au nanoparticles

Abstract: We present a new method for the deposition of colloidal Au nanoparticles on the surface of silicon substrates based on short-time Ar plasma treatment without the use of any polymeric layers. The elaborated method is compatible with molecular beam epitaxy, which allowed us to carry out the detailed study of GaAs nanowire synthesis on Si(111) substrates using colloidal Au nanoparticles as seeds for their growth. The results obtained elucidated the causes of the difference between the initial nanoparticle sizes a… Show more

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Cited by 8 publications
(16 citation statements)
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“…The vertically standing nanodisks were fabricated from GaAs/AlGaAs core-shell nanowires deposited on ITO glass substrate using FIB milling. The nanowires were grown by molecular beam epitaxy on Si (111) substrates, using Au colloid droplets as a catalyst material 42 . As the first step, the GaAs core of nanowires were grown, then in situ the Al 0.2 Ga 0.8 As shells were grown to passivate the surface states 47 .…”
Section: High-order Multipolesmentioning
confidence: 99%
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“…The vertically standing nanodisks were fabricated from GaAs/AlGaAs core-shell nanowires deposited on ITO glass substrate using FIB milling. The nanowires were grown by molecular beam epitaxy on Si (111) substrates, using Au colloid droplets as a catalyst material 42 . As the first step, the GaAs core of nanowires were grown, then in situ the Al 0.2 Ga 0.8 As shells were grown to passivate the surface states 47 .…”
Section: High-order Multipolesmentioning
confidence: 99%
“…Figure 1 presents the main steps of the fabrication process. We mechanically transferred nanowires, grown by molecular beam epitaxy 42 cylindrical structure as highlighted in red in Figure 2 and it is placed on a glass substrate. The center of the disk is aligned with the center of the simulation sphere, where we perform our calculations.…”
mentioning
confidence: 99%
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“…First, the nanowires were grown by molecular beam epitaxy on Si (111) substrates using Au colloid droplets as a catalyst material. [63] As a next step, the GaAs nanowires were grown, and Al 0.2 Ga 0.8 As shells were grown in situ to passivate the surface states. [64] The nanowires were then transferred on the ITO covered glass substrate and sliced in the focused Gallium liquid metal ion microscope coupled with a high-resolution field effect gun scanning electron microscope (NVision 40, Carl Zeiss AG).…”
Section: Methodsmentioning
confidence: 99%
“…To promote NWs growth, we have used calibrated Au nanoparticles with average diameter of 20 nm. These particles were randomly dispersed onto substrate and subjected to a special procedure described in [31]. The procedure of Au nanoparticles deposition, in principal, allows one to control the density of the seeds.…”
Section: Methodsmentioning
confidence: 99%