New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment

Кукушкин, С. А.; Осипов, А. В.

doi:10.1134/s1063783408070081

Cited by 101 publications

(63 citation statements)

References 14 publications

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“…Therefore, elastic dipoles additionally play the role of ordering epitaxy centers. To confirm experimentally the suggested relaxation mechanism of elastic energy, silicon (111) substrates 35 mm in diameter were held in a vacuum furnace at Т = 1100-1200°С in the atmosphere of carbon mon oxide at p = 10-300 Pa for 5-60 min [4]. A silicon car bide film 50-200 nm thick grew on the silicon surface during this time.…”

Section: Mechanics Thin Film Heteroepitaxy By the Formation Of The DImentioning

confidence: 98%

“…In other words, the dilatation elastic energy can relax com pletely due to dipoles only since W dil ⎯ ΔW = 0. The lifetime of dilatation dipoles at 1100-1200°C is evalu ated as ~10 -1 Ϭ1 s, which is three orders of magnitude larger than the formation time of the first SiC mono layer [4]. Therefore, elastic dipoles additionally play the role of ordering epitaxy centers.…”

Section: Mechanics Thin Film Heteroepitaxy By the Formation Of The DImentioning

confidence: 99%

“…A difference of lattice parameters of ~20% does not allow us to obtain dislo cation free and crack free SiC on Si directly by depo sition from the vapor phase. In order to provide the effective operation of a new relaxation mechanism of elastic energy due to the interaction of point defects, we suggest deposition of SiC not from the vapor phase but immediately from the matrix of the single crystal line Si substrate due to the chemical reaction between the crystalline Si and gaseous carbon monoxide [4]. We selected this reaction because of the fact that the forming gaseous silicon monoxide SiO partially carries the atoms from the Si matrix inducing vacancies in it, while gaseous carbon monoxide CO is the source of carbon atoms C arranged in atomic voids of the silicon lattice [4].…”

Section: Mechanics Thin Film Heteroepitaxy By the Formation Of The DImentioning

confidence: 99%

“…We can pursue the method of seeking the tensor of Green's function developed by Lifshits and Rosen zweig for an infinite crystal [3]. According to this reac tion, point defects penetrate into silicon due to the stimulated diffusion of CO molecules to the depth 100 nm [4], which is larger than the size of point defects by a factor of 10 3 ; therefore, in computations, we use the Lifshits-Rosenzweig function…”

Section: Mechanics Thin Film Heteroepitaxy By the Formation Of The DImentioning

confidence: 99%

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Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble

Кукушкин

Осипов

2012

Dokl. Phys.

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The tremendous elastic stresses appearing during the growth of single crystal substrates with the lattice parameter strongly differing from the lattice parameter of the substrate do not allow us to obtain high quality layers of new broad band semiconductors without misfit dislocations. It is assumed that the currently most promising of these are silicon carbide SiC, gal lium nitride GaN, aluminum nitride AlN, boron nitride BN, and zinc oxide ZnO [1]. Integration of these materials into the silicon electronics plays a key role for the development of industrial technologies; therefore, it is very important to grow epitaxial films of these materials just on silicon [1]. However, due to the large difference in lattice parameters of silicon and all the mentioned broad band semiconductors, i.e., dur ing the ordered growth of these materials (~20%), elastic energy rises on the surface of silicon single crys tals. This leads to the appearance of a tremendous number of misfit dislocations of the lattices growing outside and even to complete film cracking. Charge carriers are scattered by dislocations; this makes it impossible to use such samples in semiconductor devices.We suggest using a new in principle relaxation mechanism of the elastic energy for growing disloca tion free heteroepitaxial films. The essence of this approach, which differs from all the existing methods of film growth, is based on the idea of preliminary incorporation of point defects, of which the skeleton of the future film will be collected, into the crystal lat tice of the silicon host. When growing the SiC film on the Si substrate, such defects are the carbon atom C incorporated in the Si interstice and the vacancy formed as a result of removal of one of the Si atoms. If these defects are attracted to one another by the elastic mechanical interaction in the silicon matrix, the sum mary elastic energy caused by their incorporation into the substrate host is considerably lower than the energy of noninteracting defects. It is well known that the spherically symmetric dilatation centers do not interact with each other at all in an isotropic medium of infinite sizes [2]. In this work, we show that the dila tation centers can attract each other in substantially anisotropic media, such as the crystal with the cubic lattice symmetry, thereby considerably decreasing the total elastic energy [2]. Such attractive centers form stable objects of a new type, the elastic dilatation dipoles. We computed the elastic energy of the system by the example of heteroepitaxy of the SiC film on the Si substrate (Si has a cubic lattice) and showed that the MECHANICS Abstract-It is shown that in substantially anisotropic media, such as a crystal with cubic lattice symmetry, the analogous dilatation centers can strongly attract each other considerably decreasing the total elastic energy. Such attractive centers form stable objects of a new type, the elastic dilatation dipoles. By the example of heteroepitaxy of the film of silicon carbide SiC on a silicon substrate, the calcu...

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Section: Mechanics Thin Film Heteroepitaxy By the Formation Of The DImentioning

confidence: 98%

Section: Mechanics Thin Film Heteroepitaxy By the Formation Of The DImentioning

confidence: 99%

Section: Mechanics Thin Film Heteroepitaxy By the Formation Of The DImentioning

confidence: 99%

Section: Mechanics Thin Film Heteroepitaxy By the Formation Of The DImentioning

confidence: 99%

See 2 more Smart Citations

Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble

Кукушкин

Осипов

2012

Dokl. Phys.

Self Cite

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“…It plays a role in graphene integration into modern technological base [13][14][15] . The standard method of semiconductor material fabrication can be uses for SiC growth, such as sublimation epitaxy [16] , different modifications of chemical vapor deposition [2,3,10] , solid phase epitaxial [17] and new method of magnetron sputtering [18] . The 3D surface micromorphology of epilayers is a very important parameter because all other properties -optical, electrical, and mechanical -stem from these and this should be studied and controlled.…”

Section: Introductionmentioning

confidence: 99%

Epitaxy of silicon carbide on silicon: Micromorphological analysis of growth surface evolution

Ramazanov

Ţălu

Sobola

et al. 2015

Superlattices and Microstructures

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Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template

Бессолов

Zubkova

Konenkova

et al. 2018

Physica Status Solidi (b)

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A new approach is proposed to the synthesis of a semipolar GaN on a Si(100) substrate at the surface of which the V-shaped nanostructures with the characteristic size of elements as low as 100 nm are formed. It has been demonstrated that application of buffer layers of 3C-SiC and AlN enables formation of the GaN(10-11) layer characterized by the full width at half maximum value as low as ω θ 45 arcmin for the X-ray diffraction rocking curve. The model based on anisotropic nucleation of AlN on the V-shaped nanostructure is proposed to explain the growth of the GaN layer in a single semipolar direction.

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New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment

Cited by 101 publications

References 14 publications

Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble

Thin-film heteroepitaxy by the formation of the dilatation dipole ensemble

Epitaxy of silicon carbide on silicon: Micromorphological analysis of growth surface evolution

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano‐Patterned SiC/Si(100) Template

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