2001
DOI: 10.1016/s0022-3115(00)00686-3
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New mechanism for radiation defect production and aggregation in crystalline ceramics

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Cited by 14 publications
(33 citation statements)
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“…The colloid growth rate is determined by the difference between the bias-induced absorption [4] and the exciton-induced emission [8] of F centers:…”
Section: Excitonic Production Of Frenkel and Schottky Defectsmentioning
confidence: 99%
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“…The colloid growth rate is determined by the difference between the bias-induced absorption [4] and the exciton-induced emission [8] of F centers:…”
Section: Excitonic Production Of Frenkel and Schottky Defectsmentioning
confidence: 99%
“…In 1977, Jain and Lidiard [3] have formulated a model, according to which, the dislocation bias for H centers was the driving force for the colloid growth in alkali halides in the same way as it is for void growth in metals under irradiation. The mechanism of dislocation climb [2] used in the Jain and Lidiard model, requires two H centers meeting each other at the dislocation core, and subsequently, the model was modified by Dubinko et al [4], who suggested that a dislocation can climb due to the production of a V F center (self-* Corresponding author: e-mail: h.w.den.hartog@phys.rug.nl, Phone: +3150-363-4789, Fax: +3150-363-4879 trapped hole neighboring a cation vacancy) induced by interactions between a dislocation and only one H center. Subsequent diffusion of V F centers away from dislocations and recombination with F centers results in the formation of stoichiometric divacancies thus providing a driving force for the formation and growth of vacancy voids observed experimentally.…”
Section: Introductionmentioning
confidence: 99%
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