New materials of spin-on organic hardmask for sub-70nm devices

Choi, Sung-Jin; Oh, Changil; Uh, Dong-Seon

doi:10.1016/j.mee.2007.02.004

Cited by 6 publications

(2 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…14 In order to overcome the limitations of * Author to whom correspondence should be addressed. this conventional lithography, we developed carbon based spin-on organic hardmask (C-SOH), 15 which can be patterned to nanosize using nanoimprint lithography and has superior etch resistance.…”

Section: Introductionmentioning

confidence: 99%

Sub 50 nm Nano-Patterns with Carbon Based Spin-On Organic Hardmask

Shin

Yang²,

Han³

et al. 2012

j. nanosci. nanotech.

View full text Add to dashboard Cite

Carbon based spin-on organic hardmask (C-SOH) was used as an imprint resin to fabricate sub 50 nm sized patterns. Imprinting of C-SOH was done with a polyurethaneacrylate (PUA) stamp. Patternability and etch resistance of the C-SOH resin was compared to poly(methyl methacrylate) (PMMA). C-SOH can be patterned at the nanosize using imprint lithography and exhibits superior etch resistance, especially for F-based plasmas. Due to the poor etch resistance of imprint resin such as PMMA, it is seldom used as an etch mask to form nano-structures by etching the Si3N4 layer. However, such a nano-structure was able to be formed by etching the Si3N4 layer using C-SOH as an etch mask.

show abstract

Section: Introductionmentioning

confidence: 99%

Sub 50 nm Nano-Patterns with Carbon Based Spin-On Organic Hardmask

Shin

Yang²,

Han³

et al. 2012

j. nanosci. nanotech.

View full text Add to dashboard Cite

show abstract

“…Therefore, new schemes, such as multilevel resist ͑MLR͒ in the etching mask structure, are required for nanoscale plasma etching because of the difficulty in patterning the layer directly with ArF or EUV resists below the 50 nm technology node. 3,4 We have attempted to increase etch selectivity of the Si 3 N 4 layer to ArF resists using CH 2 F 2 / H 2 / Ar plasma. 5,6 In this case, precise control of critical dimension ͑CD͒ after etching was limited due to heavy polymerization on the resist pattern.…”

Section: Introductionmentioning

confidence: 99%