New materials for “quantum” storage of electric power

Grygorchak, I. I.; Lukiyanets, B. A.; Balaban, O.; Bishchaniuk, T. M.; Shvets, R. Ya.

doi:10.1016/j.mssp.2014.09.011

Cited by 4 publications

(2 citation statements)

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“…Moreover, in this case, the combination of ultra-high values of and low (less than 1) value of tgδ (inset in Fig. 6b) in infra-low frequency area may be indicative of the quantum nature of power storage in InSe ‹his + H 2 O + KOH› (perpendicular to the layers), thus, the possibility of the formation of quantum accumulators of electrical energy [11,12]. For InSe ‹his + H 2 O›, in turn, similar combination of and tgδ values is observed in the range of 1 Hz to 120 Hz, what is promising for the development of quantum capacitors for radio frequency.…”

Section: Resultsmentioning

confidence: 89%

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The impact of phase state of guest histidine on properties and practical applications of nanohybrids on InSe and GaSe basis

Ivashchyshyn

Grygorchak

Balaban

et al. 2017

Materials Science-Poland

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A new technological approach to the synthesis of multilayer nanostructures which allows their use in high-performance storage of electrical energy at the nanoscale level is discussed in this paper. In particular, the effect of co-intercalation of histidine (his), water and a solution of KOH into layered semiconductors of GaSe and InSe on the charge accumulation are studied. Based on the data of the cyclic current-voltage characteristics (CVC) a power storage mechanism (capacitive/pseudocapacitive) in each of these structures is described. This mechanism is in a good accord with the results of galvanostatic studies. The simulation of the parameters of the impedance equivalent circuit has been carried out, proving the possibility of using the described structures for nanoelectronics and nanoenergy devices. The observed values of tangent of electrical losses tgδ (<1) in coherence with a high dielectric constant are promising for the creation of quantum batteries and capacitors.

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Section: Resultsmentioning

confidence: 89%

“…in Table 1 and Table 2, respectively. This behavior of the impedance locus is known as the phenomenon of "negative" capacity, the mechanism which has not been yet fully understood [11,12]. This phenomenon is promising for the development of nanoscale delay lines without gyrators.…”

Section: Resultsmentioning

confidence: 99%