New KrF and ArF Excimer Lasers for Advanced Deep Ultraviolet Optical Lithography

Endert, Heinrich; Pätzel, R.; Rebhan, Ulrich; Powell, Michael W.; Basting, D.

doi:10.1143/jjap.34.4050

“…7 Common processes include laser scribing, cutting, drilling, or etching to produce relief structures or holes in materials in ambient or controlled atmospheres. 8 Industrial applications using this technique range from high-throughput steel fabrication, to inkjet and fuel-injection nozzle fabrication, 9,10 to high-resolution manufacturing and texturing of stents or other implantable biomaterials. 11 At a smaller scale, inexpensive benchtop laser cutting and engraving systems can be purchased by the hobbyist or small company for artistic and architectural renderings.…”

Section: Laser Direct-write Subtraction (Ldw-)mentioning

confidence: 99%

Laser Direct-Write Processing

Arnold¹,

Piqué²

2007

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Direct-write techniques enable computer-controlled two-and three-dimensional pattern formation in a serial fashion. Among these techniques, the versatility offered by laser-based direct-write methods is unique, given their ability to add, remove, and modify different types of materials without physical contact between a tool or nozzle and the material of interest. Laser pulses used to generate the patterns can be manipulated to control the composition, structure, and even properties of individual three-dimensional volumes of materials across length scales spanning six orders of magnitude, from nanometers to millimeters. Such resolution, combined with the ability to process complex or delicate material systems, enables laser direct-write tools to fabricate structures that are not possible to generate using other serial or parallel fabrication techniques. The goal of the articles in this issue of MRS Bulletin is to illustrate the range of materials processing capabilities, fundamental research opportunities, and commercially viable applications that can be achieved using recently developed laser direct-write techniques. We hope that the articles provide the reader with a fresh perspective on the challenges and opportunities that these powerful techniques offer for the fabrication of novel devices and structures.

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“…High-pressure discharge-pumped rare-gas halide excimer lasers, such as ArF, KrF and XeCl lasers, have been extensively utilized in the advanced semiconductor industry, particularly in ultraviolet (UV) lithography [1][2][3][4], excimer laser annealing [5][6][7][8] and pulsed laser deposition [9][10][11], due to their specific advantages of short wavelengths, high average power and high repetition rate. Gas discharge pumping has revolutionized the development of excimer lasers, enabling pulse repetition rates of several kHz and pulse voltage rise times of less than 100 ns.…”

Section: Introductionmentioning

confidence: 99%

Effects of tunable circuit parameters on pulsed discharge and input-output characteristics of a XeCl excimer laser

Chen,

Zhao,

Liu

et al. 2024

J. Phys. D: Appl. Phys.

1

0

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High-pressure, pulsed discharge-pumped XeCl excimer lasers are operating in the ultraviolet range at a wavelength of 308 nm. In this paper, a one-dimensional fluid model coupled to a magnetic pulse compression (MPC) excitation circuit and a laser gain model is established for describing the discharge and laser output characteristics of XeCl excimer lasers. The effects of the peaking capacitor C p (the terminal of the MPC circuit) on the discharge properties and input-output characteristics are explored. The results reveal that C p plays a key role in suppressing discharge pulse oscillation, which in turn influences the peak value and duration of the laser pulse. By optimizing the capacitance, a maximum excimer formation efficiency of 6.6% and a maximum laser output efficiency of 5% (output energy of 1.26 J) are obtained when C p = 1.12 C s , where C s is the storage capacitor in the MPC circuit.

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“…In particular, water is transparent, extending to 170 nm [7], which is promising for potential applications in UV-tolerant spatial light modulators for ultraviolet (UV) light [8], which are currently underdeveloped. If spatial light modulators (SLMs) can be used for beam shaping of 248 nm KrF and 193 nm ArF lasers [9], we may expect to see innovations in laser microfabrication and semiconductor photolithography. Water is almost the only material available for SLM in that wavelength range.…”

Section: Introductionmentioning

confidence: 99%

Pockels Effect at the Interface between Water and Ti Electrode

Tanimoto,

Okada,

Kobayashi

et al. 2023

Applied Sciences

1

0

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The Pockels coefficient of interfacial water between bulk water and a Ti electrode was estimated from the electroreflectance spectra (ΔR/R) to be r13≈−150 pm/V as the maximum value of magnitude, which is comparable in magnitude to the largest coefficient for electrode interfacial water, i.e., 200 pm/V for interfacial water on a transparent oxide electrode. This Pockels signal increased by a factor of about ±3 by applying a DC bias voltage of ±1 V. The reflectance (R) of the Ti electrode had a dip structure in the UV region (3.5–4.5 eV) due to the interference of a 14 nm thick surface oxide film, and the ΔR/R spectra in aqueous electrolyte solution showed a large reflectance change in the UV region with a dispersive shape due to the contribution of the TiO2 film. The reproducibility of the electroreflectance experiment was high, suggesting that the surface oxide film contributes to the large Pockels effect of interfacial water and the robustness of the electrode.

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New KrF and ArF Excimer Lasers for Advanced Deep Ultraviolet Optical Lithography

Cited by 11 publications

References 3 publications

Laser Direct-Write Processing

Laser Direct-Write Processing

Effects of tunable circuit parameters on pulsed discharge and input-output characteristics of a XeCl excimer laser

Pockels Effect at the Interface between Water and Ti Electrode

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