New investigation of electronic properties of BGaAs/GaAs single quantum well for photonic applications

Theoretical Investigation of BGaAs/GaAs for Optoelectronic Device Applications

“…define the strength of the interaction and are also added to extend the 10-band kp Hamiltonian. The resultant matrix is defined below 3,19…”

“…Thus, it is observed that the absorption coefficient is strongly affected and highly sensitive to the distribution of the boron atoms. 3,22 Material Gain for Photonic Applications Figure 5a shows the optical gain of BGaAs/GaAs (6%B) quantum well for different values of well width with surface carrier concentration 9 Â 10 16 m À2 . It is evident that increasing the dimension of the active region of quantum wells for persistent surface carrier concentration causes the spectrum peak shift toward higher wavelength.…”

“…Highly mismatched alloys (HMA) have attracted great attention owing to their new potential application in bandgap engineering, and related optoelectronic integration. 1,2 Specifically, BGaAs offer a new possibility in device applications such as square quantum wells, 3 intermediate band solar cells, 4 and photonic device applications. 5 This novel ternary alloy is a combination of two binary alloys, GaAs and BAs, lattice-matched to 16%.…”

“…5 This novel ternary alloy is a combination of two binary alloys, GaAs and BAs, lattice-matched to 16%. 3 In the previous research, GaAsN is classified as an HMA and has been the subject of attention because of its small size and high electronegativity. The HMA GaAsN has a variable direct bandgap, and the high absorption coefficient makes a promising material for multijunction solar cell applications.…”

“…17,18 However, elements in MOCVD such as boron have the major disadvantage of being dangerous to handle, e.g., diborane and trimethylboron are highly flammable and highly toxic. 4 Recently, Hidouri et al 3,4 studied the growth of a BGaAs square quantum well for photonic device application and intermediate-band solar cells. They mainly reported surface rugosity and variable size study using thermal treatment, deep level transition, and engineering of carrier localization in BGaAs/GaAs SQWs.…”