New Insulating Antiferromagnetic Quaternary Iridates MLa10Ir4O24 (M = Sr, Ba)

Abstract

Recently, oxides of Ir4+ have received renewed attention in the condensed matter physics community, as it has been reported that certain iridates have a strongly spin-orbital coupled (SOC) electronic state, Jeff = ½, that defines the electronic and magnetic properties. The canonical example is the Ruddlesden-Popper compound Sr2IrO4, which has been suggested as a potential route to a new class of high temperature superconductor due to the formal analogy between Jeff = ½ and the S = ½ state of the cuprate superconductors. The quest for other iridium oxides that present tests of the underlying SOC physics is underway. In this spirit, here we report the synthesis and physical properties of two new quaternary tetravalent iridates, MLa10Ir4O24 (M = Sr, Ba). The crystal structure of both compounds features isolated IrO6 octahedra in which the electronic configuration of Ir is d5. Both compounds order antiferromagnetically despite the lack of obvious superexchange pathways, and resistivity measurement shows that SrLa10Ir4O24 is an insulator.

Temperature Driven Phase Transition at the Antimonene/Bi2Se3 van der Waals Heterostructure

“…6 As a consequence, the electronic gap might be tuned to be negative, zero and positive and also show an indirect-to-direct transition under biaxial strain. [7][8][9] Beside the potential of β-Sb, a second 2D allotrope (the antimony equivalent of black phosphorus, hereafter α-Sb) is currently attracting much interest. α-Sb shows a direct instead of an indirect gap as found in β-Sb.…”

Tunnelling characteristics of Stone–Wales defects in monolayers of Sn and group-V elements

“…The group-V elements exhibit variety of stable allotropic forms [15][16][17][18][19], though the graphene-like structure for group-V monolayers was considered. Table 1 lists the calculated structural properties of the monolayers considered.…”

“…Multilayer stanene that has been synthesized in a hexagonal lattice [4][5], crystallizes in a buckled structure with topological insulator properties [6][7][8]. Similarly, the group-V monolayers have gained particular attention [9][10][11][12][13][14]; e.g., arsenene, an atomic layer of As atoms, exhibits four different phases that switch into a topological insulator by an external electric field [15][16]; multilayer Sb shows a higher stability in β-phase [17] among the theoretically predicted four different phases [18][19];…”

Electronic and Optical Properties of GaAs Bilayer

“…In such systems, the structural and dimensionality brings some unusual properties which opened up new technologically promising pathways for device applications. [4,5] There are several report based on monolayer structure such as graphene, [6] silicene, [7,8] arsenene, [9] phosphorene, [10] tinene, [11] antimonene, [12] HgTe and HgSe, [13] boron nitrate [14] and group III-V compounds [15] etc. are studied well in the literature under different external stimuli such as electric field, strain and pressure.…”

“…are studied well in the literature under different external stimuli such as electric field, strain and pressure. The monolayer of these material shows peculiar properties such as Dirac cone, quantum hall effect, spin quantum hall effect and topological phase [10][11][12][13] in the presence of external stimuli. The formation of monolayer of these material have always challenging for experimentalist but bilayer system are more realistic and experimentally achievable.…”