New HTDR Phenomenon Study for 2Xnm NAND Flash Cycling Interval Time Effect

Chia-Sheng, Huang; Ogino, Ryoichi

doi:10.1109/ipfa.2018.8452599

2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2018

DOI: 10.1109/ipfa.2018.8452599

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New HTDR Phenomenon Study for 2Xnm NAND Flash Cycling Interval Time Effect

Huang Chia-Sheng

Ryoichi Ogino

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New HTDR Phenomenon Study for 2Xnm NAND Flash Cycling Interval Time Effect

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