“…Several process parameters impact on the development rate, such as resist thickness, softbake, rehydration, air temperature and humidity, and developer concentration. Previous tests showed that, for the process conditions of table 1, the threshold doses are D 0 = 350 and D 100 = 4500 mJ/cm 2 , for a resist film of 12 µm thick, where D 0 is the minimum absorbed light dose before the resist begin to develop, and D 100 is the maximum dose the resist is The simulation was carried out by using the model presented in previous section (equations [7][8][9]. The optical transmittance of an input image of a dark field line/space mask pattern was generated, as shown in figure 3.…”