New High Temperature Electronic Components for Power Management and Motor Control Applications

Abstract

This paper presenst CISSOID's new high temperature chips for Power Management and Motor Control in automotive, oil & gas, aerospace and industrial applications. High temperature DC-DC reference designs, called respectively ETNA, VESUVIO™ and EREBUS™, have been announced recently. These Buck (step-down) DC-DC converters are built with proven CISSOID products as active components rated from −55°C up to 225°C. These DC-DC converters can have input voltages from 6V up to 50V. The output voltage can be adjusted from 10% up to 90% of the input voltage. Power efficiencies in excess of 90% above 200°C have been demonstrated. VESUVIO™ and EREBUS™ are based on MAGMA PWM controller, HYPERION half-bridge driver and two power transistors to implement a synchronous Buck converter. For high voltage and power levels, new Silicon-Carbide devices allow operating at high junction temperatures. They enable high power modules with higher densities in terms of size and weight. Having power drivers able to operate very close to these devices allow further integration of power modules while increasing the performances thanks to lower parasitic capacitances and inductances. This will also ease to increase switching frequencies, another key advantage of these new devices. For these applications, CISSOID has released PROMETHEUS I Power Driver reference design that can sink and source currents up to 2Amps at a supply voltage from 11V up to 30V. Recently announced PROMETHEUS II design, based on HYPERION driver, enables rise and fall times of 25ns on a 1nF load.

Fabrication of silicon-on-diamond substrate with an ultrathin SiO2 bonding layer

“…In such a situation, the increase in the operating temperature of a DC-DC converter system is an issue that must be resolved because the converter efficiency decreases owing to heat. 3,4) A MOSFET is used as a switching device in a DC-DC converter. The increase in temperature due to current flow increases the switching loss of the MOSFET.…”