New Generation of Ultrasensitive Label-Free Optical Si Nanowire-Based Biosensors

Irrera, Alessia; Leonardi, Antonio Alessio; Franco, Cinzia Di; Palazzo, Gerardo; D’Andrea, Cristiano; Manoli, Kyriaki; Franzò, G.; Musumeci, Paolo; Fazio, Barbara; Torsi, Luisa; Priolo, F.

doi:10.1021/acsphotonics.7b00983

Cited by 45 publications

(54 citation statements)

References 43 publications

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“…Indeed, the RT PL emission is attested by the spectra in Figure 4 and is so bright that it can be observed by naked eye. In the past, we have already shown that the emission of the Si NWs is due to quantum confinement effect [46] and some application of their bright emission [10,11,47]. Once we had characterized the key fabrication parameters of this method, we spent our efforts on the study of their influence on the optical characterization.…”

Section: Resultsmentioning

confidence: 99%

“…Silicon nanowires are emerging in several fields as an innovative building block to overcome different challenges from microelectronics [1][2][3] to energetics [4][5][6], photonics [7][8][9], and sensing [10][11][12]. Starting from microelectronics, a lot of effort has been spent in recent years to find novel solutions that permit to surpass the limitations of the modern-day Moore's law [13].…”

Section: Introductionmentioning

confidence: 99%

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CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication

Leonardi

Irrera

2020

Nanomaterials

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Silicon nanowires (Si NWs) are emerging as an innovative building block in several fields, such as microelectronics, energetics, photonics, and sensing. The interest in Si NWs is related to the high surface to volume ratio and the simpler coupling with the industrial flat architecture. In particular, Si NWs emerge as a very promising material to couple the light to silicon. However, with the standard synthesis methods, the realization of quantum-confined Si NWs is very complex and often requires expensive equipment. Metal-Assisted Chemical Etching (MACE) is gaining more and more attention as a novel approach able to guarantee high-quality Si NWs and high density with a cost-effective approach. Our group has recently modified the traditional MACE approach through the use of thin metal films, obtaining a strong control on the optical and structural properties of the Si NWs as a function of the etching process. This method is Complementary Metal-Oxide-Semiconductors (CMOS)-technology compatible, low-cost, and permits us to obtain a high density, and room temperature light-emitting Si NWs due to the quantum confinement effect. A strong control on the Si NWs characteristics may pave the way to a real industrial transfer of this fabrication methodology for both microelectronics and optoelectronics applications.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication

Leonardi

Irrera

2020

Nanomaterials

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“…We already demonstrated the realization of Si NWs with an extremely small diameter, compatible with the observation of quantum confinement effects leading to the observation of light emission at room temperature. These Si NWs are obtained by using a modified metal-assisted wet etching process 10 , a preparation methodology that is at low cost, fast and compatible with silicon technology. Moreover, the study and optimization of their preparation allowed to realize arrays of Si nanowires with fractal geometry 12 , showing very interesting optical properties.…”

Section: Introductionmentioning

confidence: 99%

Erbium emission in Er:Y2O3 decorated fractal arrays of silicon nanowires

Faro

Priolo

Fazio

et al. 2020

Sci Rep

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Disordered materials with new optical properties are capturing the interest of the scientific community due to the observation of innovative phenomena. We present the realization of novel optical materials obtained by fractal arrays of silicon nanowires (NWs) synthesized at low cost, without mask or lithography processes and decorated with Er:Y 2 O 3 , one of the most promising material for the integration of erbium in photonics. The investigated structural properties of the fractal Er:Y 2 O 3 /NWs demonstrate that the fractal morphology can be tuned as a function of the sputtering deposition angle (from 5° to 15°) of the Er:Y 2 O 3 layer. We demonstrate that by this novel approach, it is possible to simply change the Er emission intensity by controlling the fractal morphology. Indeed, we achieved the increment of Er emission at 560 nm, opening new perspectives on the control and enhancement of the optical response of novel disordered materials.

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“…Silicon nanowires (SiNWs) are attracting worldwide research interest due to their fascinating properties and application in a wide range of areas, such as electronics, photovoltaics, solar cells, diagnostics, molecular sensing, batteries, catalysis, and analytical chemistry [1,2,3,4,5,6,7]. …”

Section: Introductionmentioning

confidence: 99%

Catalytic Activity of Silicon Nanowires Decorated with Gold and Copper Nanoparticles Deposited by Pulsed Laser Ablation

et al. 2018

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Silicon nanowires (SiNWs) decorated by pulsed laser ablation with gold or copper nanoparticles (labeled as AuNPs@SiNWs and CuNPs@SiNWs) were investigated for their catalytic properties. Results demonstrated high catalytic performances in the Caryl–N couplings and subsequent carbonylations for gold and copper catalysts, respectively, that have no precedents in the literature. The excellent activity, attested by the very high turn over number (TON) values, was due both to the uniform coverage along the NW length and to the absence of the chemical shell surrounding the metal nanoparticles (MeNPs). A high recyclability was also observed and can be ascribed to the strong covalent interaction at the Me–Si interface by virtue of metal “silicides” formation.

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New Generation of Ultrasensitive Label-Free Optical Si Nanowire-Based Biosensors

Cited by 45 publications

References 43 publications

CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication

CMOS-Compatible and Low-Cost Thin Film MACE Approach for Light-Emitting Si NWs Fabrication

Erbium emission in Er:Y2O3 decorated fractal arrays of silicon nanowires

Catalytic Activity of Silicon Nanowires Decorated with Gold and Copper Nanoparticles Deposited by Pulsed Laser Ablation

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