New generation of reactive pre-clean prior to barrier–seed deposition to preserve ULK integrity

Delavant, M.; Guillan, J.; Galpin, D.; Chhun, S.; Juhel, M.; Guiheux, Denis; Jian, Ping; Ha, T. H.; Forster, John; Guggilla, S.; Hong, Soon-kyu; Bozon, B.

doi:10.1016/j.mee.2011.05.038

Cited by 3 publications

(2 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…44 Another notable advantage with the NiGe system, compared to the Cu-based ones, is that the films are synthesized without any plasma pretreatment, to remove the native oxide, which potentially can minimize the problems associated with the damage of ultralow k materials for advanced interconnect developments. 45,46 It should be mentioned here that at the opted reaction temperatures (225−300 °C) to synthesize NiGe films of different thicknesses GeH 4 undergoes selective and catalytic CVD on Ni 39,47,48 since no GeH 4 decomposition on thermal oxide up to 350 °C was observed, based on GIXRD results (data not shown). This is further supported by the previous GeH 4 CVD reports wherein the pyrolysis leading to Ge films is demonstrated at 400 °C or above.…”

Section: ■ Results and Discussionmentioning

confidence: 94%

“…NiGe films deposited directly on oxides will be beneficial in terms of both intrinsic resistivity, with no contribution from the underlying layers, and no interface related issues with adhesion and diffusion barrier layers as observed for Cu-based systems . Another notable advantage with the NiGe system, compared to the Cu-based ones, is that the films are synthesized without any plasma pretreatment, to remove the native oxide, which potentially can minimize the problems associated with the damage of ultralow k materials for advanced interconnect developments. , …”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH₄

Peter

Opsomer

Adelmann

et al. 2013

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

A low-temperature (225-300 °C) solid-vapor reaction process is reported for the synthesis of ultrathin NiGe films (∼6-23 nm) on 300 mm Si wafers covered with thermal oxide. The films were prepared via catalytic chemical vapor reaction of germane (GeH4) gas with physical vapor deposited (PVD) Ni films of different thickness (2-10 nm). The process optimization by investigating GeH4 partial pressure, reaction temperature, and time shows that low resistive, stoichiometric, and phase pure NiGe films can be formed within a broad window. NiGe films crystallized in an orthorhombic structure and were found to exhibit a smooth morphology with homogeneous composition as evidenced by glancing angle X-ray diffraction (GIXRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Rutherford back-scattering (RBS) analysis. Transmission electron microscopy (TEM) analysis shows that the NiGe layers exhibit a good adhesion without voids and a sharp interface on the thermal oxide. The NiGe films were found to be morphologically and structurally stable up to 500 °C and exhibit a resistivity value of 29 μΩ cm for 10 nm NiGe films.

show abstract

Section: ■ Results and Discussionmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%

Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH₄

Peter

Opsomer

Adelmann

et al. 2013

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

View full text Add to dashboard Cite

This paper presents an in-depth overview of the application and impact of UV/VUV light in advanced interconnect technology. UV light application in BEOL historically was mainly motivated by the need to remove organic porogen and generate porosity in organosilicate (OSG) low-k films. Porosity lowered the film's dielectric constant, k, which enables one to reduce the interconnect wiring capacitance contribution to the RC signal delay in integrated circuits. The UV-based low-k film curing (λ > 200 nm) proved superior to thermal annealing and electron beam curing. UV and VUV light also play a significant role in plasma-induced damage to pSiCOH. VUV light with λ < 190–200 nm is able to break Si-CH3 bonds and to make low-k materials hydrophilic. The following moisture adsorption degrades the low-k properties and reliability. This fact motivated research into the mechanisms of UV/VUV photon interactions in pSiCOH films and in other materials used in BEOL nanofabrication. Today, the mechanisms of UV/VUV photon interactions with pSiCOH and other films used in interconnect fabrication are fairly well understood after nearly two decades of research. This understanding has allowed engineers to both control the damaging effects of photons and utilize the UV light for material engineering and nanofabrication processes. Some UV-based technological solutions, such as low-k curing and UV-induced stress engineering, have already been widely adopted for high volume manufacturing. Nevertheless, the challenges in nanoscaling technology may promote more widespread adoption of photon-assisted processing. We hope that fundamental insights and prospected applications described in this article will help the reader to find the optimal way in this wide and rapidly developing technology area.

show abstract

Preparation of Al2O3 tunnel barrier layer in atome-level controlled Josephson junction

Li¹,

Wang²,

Huang³

et al. 2022

Acta Phys. Sin.

View full text Add to dashboard Cite

The conventional thermal oxidation method of fabricating the AlOX tunnel barrier in Josephson junctions is diffusing high-purity oxygen to the surface of Al. But the tunnel barrier which fabricated by this method is not completely oxidized. The thickness of barrier is also hard to control accurately. In this work, we used atomic layer deposition to grow Al2O3 tunnel barrier on the surface of Ti. The sandwich structure of Ti/Al2O3/Ti Josephson junctions were grown layer-by-layer. We investigated the corresponding microstructure and electrical properties by adjusting the thickness of the Al2O3 tunnel barriers and the areas of the junctions. The experimental results show that the thickness of the monolayer Al2O3 film was about 1.17 Å, which grown by atomic layer deposition achieves atomic controlled thickness. The resistance is controlled by adjusting the barrier thickness at room temperature. And we obtained a well resistance uniformity of the junctions by optimizing the junctions' areas at room temperature.

show abstract

New generation of reactive pre-clean prior to barrier–seed deposition to preserve ULK integrity

Cited by 3 publications

References 1 publication

Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH₄

Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH₄

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Preparation of Al<sub>2</sub>O<sub>3</sub> tunnel barrier layer in atome-level controlled Josephson junction

Contact Info

Product

Resources

About

New generation of reactive pre-clean prior to barrier–seed deposition to preserve ULK integrity

Cited by 3 publications

References 1 publication

Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH4

Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH4

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Preparation of Al<sub>2</sub>O<sub>3</sub> tunnel barrier layer in atome-level controlled Josephson junction

Contact Info

Product

Resources

About

Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH₄

Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH₄