New generation copper-based interconnection from nanoporous CuSn alloy film sintered at low temperatures
Ezer Castillo,
Abdullah F. Pasha,
Zachary I. Larson
et al.
Abstract:Semiconductor devices require interconnections with high current-carrying capacity, capable of withstanding significant thermal stress. Third-generation semiconductors often operate under conditions that demand temperatures as high as 300°C. To address this...
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