New Features of Dark and Photoconductivity Response of Low Energy Ar<sup>+</sup> Ion bombarded GaAs

Vaseashta, Ashok; Burton, L. C.

doi:10.1557/proc-147-309

MRS Proc.

1989

DOI: 10.1557/proc-147-309

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New Features of Dark and Photoconductivity Response of Low Energy Ar⁺ Ion bombarded GaAs

Ashok Vaseashta

L. C. Burton

Abstract: Photoconductivity measurements have been made on three SI GaAs sample types: Ar+ ion etched at leV, 3keV, and unetched. Measurements were made versus time, wavelength, and temperature.

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New Features of Dark and Photoconductivity Response of Low Energy Ar⁺ Ion bombarded GaAs

Abstract: Photoconductivity measurements have been made on three SI GaAs sample types: Ar+ ion etched at leV, 3keV, and unetched. Measurements were made versus time, wavelength, and temperature.

Cited by 0 publications

References 14 publications

No citations

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New Features of Dark and Photoconductivity Response of Low Energy Ar+ Ion bombarded GaAs

Abstract: Photoconductivity measurements have been made on three SI GaAs sample types: Ar+ ion etched at leV, 3keV, and unetched. Measurements were made versus time, wavelength, and temperature.

Cited by 0 publications

References 14 publications

No citations

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New Features of Dark and Photoconductivity Response of Low Energy Ar⁺ Ion bombarded GaAs