New efficient solar cell structures based on zinc oxide nanorods

Pietruszka, R.; Witkowski, B.S.; Gierałtowska, S.; Caban, P.; Wachnicki, Ł.; Zielony, E.; Gwóźdź, Katarzyna; Biegański, P.; Płaczek‐Popko, E.; Godlewski, M.

doi:10.1016/j.solmat.2015.06.042

Cited by 115 publications

(38 citation statements)

References 28 publications

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“…Recently, the interest in interfacing TMOs with silicon has substantially increased. Silicon/TMO structures can be encountered not only in water‐splitting devices where the TMO layer is a catalytic layer, but also in solid‐state junction where the TMO layer could be implemented for creating a charge‐selective contact. For instance, n‐type materials as TiO 2 and ZnO could be implemented to create electron‐selective contacts on silicon, whereas p‐type materials or high‐work‐function materials, such as MoO 3 , WO 3 , V 2 O 5 , and NiO, could be implemented to create hole‐selective contacts .…”

Section: Introductionmentioning

confidence: 99%

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

Poulain

Proost

Klein

2019

Physica Status Solidi (a)

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Different magnetron sputtering‐based deposition methods of nickel oxide SiO2‐passivated Si surfaces are compared. Results highlight that the presence of oxygen in the deposition chamber during reactive sputtering drastically affects the Si/SiO2 interface. An alternative method for the preparation of NiO is the sputtering of metallic nickel in oxygen‐free atmosphere followed by a post oxidation of the deposited layer in an oxygen atmosphere without plasma exposition is proposed. This method is introduced as metal layer oxidation (MLO). Using this technique, the barrier height on n‐type silicon increases from ≈0.4 eV for reactively sputtered NiO to more than 0.6 eV for the MLO method. In situ photoelectron spectroscopy evidences the formation of an extra electronic state when NiO is reactively sputtered, which is assigned to the intense oxygen ion bombardment of the Si/SiO2 surface during the process. This extra‐electronic state pins the silicon energy bands in an undesirable position. The extra‐electronic state is associated with oxygen interstitial in the SiO2 implanted during reactive sputtering.

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Section: Introductionmentioning

confidence: 99%

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

Poulain

Proost

Klein

2019

Physica Status Solidi (a)

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“…As an important branch of nanomaterials, nano‐semiconductor materials have also been greatly developed, and the research results have been widely applied in industry. ZnO is a third‐generation semiconductor and is studied in solar cells, photodetectors, field emission diodes, ferromagnetic materials, gas sensors, and as a photocatalyst . Actually, the conductivity of as‐prepared ZnO is not ideal for application in devices; however, it can be improved by elemental doping.…”

Section: Introductionmentioning

confidence: 99%

The Photocatalytic Properties of Al‐doped ZnO Nanotubes Decorated with Cu₂O Nanoparticles

Wang

et al. 2019

Physica Status Solidi (a)

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Al‐doped ZnO nanotubes (NTs) decorated with Cu2O particles (Al‐ZnO/Cu2O NTs) are prepared by a two‐step hydrothermal method, and the photocatalytic properties are examined by the degradation of methyl orange (MO) solution under simulated solar light at room temperature. Compared with the Al‐doped ZnO nanorods (Al‐ZnO NRs) and the Al‐doped ZnO NTs (Al‐ZnO NTs), the Al‐ZnO/Cu2O NTs exhibit better photocatalytic properties. The improvement of photocatalytic performance of Al‐ZnO/Cu2O NTs is attributed to both Cu2O particle decoration and NT structures. In the samples, the decoration of Cu2O particles can prolong the exciton lifetimes, and the NT structures increase specific area. Therefore, both of these two conditions contribute to improved photocatalytic efficiency.

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“…3,4 Cheap silicon wafers have been used as a substrate to lower the production costs. Once the properties of the material are characterized, further optimization of the heterojunctions will be possible.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Defects Origin in p-Type Si for Solar Applications

Gwóźdź

Płaczek‐Popko

Mikosza

et al. 2017

Journal of Elec Materi

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In order to improve the efficiency of a solar cell based on silicon, one must find a compromise between its price and crystalline quality. That is precisely why the knowledge of defects present in the material is of primary importance. This paper studies the defects in commercially available cheap Schottky titanium/gold silicon wafers. The electrical properties of the diodes were defined by using current-voltage and capacitance-voltage measurements. Low series resistance and ideality factor are proofs of the good quality of the sample. The concentration of the acceptors is in accordance with the manufacturer's specifications. Deep level transient spectroscopy measurements were used to identify the defects. Three hole traps were found with activation energies equal to 0.093 eV, 0.379 eV, and 0.535 eV. Comparing the values with the available literature, the defects were determined as connected to the presence of iron interstitials in the silicon. The quality of the silicon wafer seems good enough to use it as a substrate for the solar cell heterojunctions.

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New efficient solar cell structures based on zinc oxide nanorods

Cited by 115 publications

References 28 publications

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

The Photocatalytic Properties of Al‐doped ZnO Nanotubes Decorated with Cu₂O Nanoparticles

Investigation of Defects Origin in p-Type Si for Solar Applications

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New efficient solar cell structures based on zinc oxide nanorods

Cited by 115 publications

References 28 publications

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

Sputter Deposition of Transition Metal Oxides on Silicon: Evidencing the Role of Oxygen Bombardment for Fermi‐Level Pinning

The Photocatalytic Properties of Al‐doped ZnO Nanotubes Decorated with Cu2O Nanoparticles

Investigation of Defects Origin in p-Type Si for Solar Applications

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The Photocatalytic Properties of Al‐doped ZnO Nanotubes Decorated with Cu₂O Nanoparticles