New Driving Scheme to Improve Hysteresis Characteristics of Organic Thin Film Transistor-Driven Active-Matrix Organic Light Emitting Diode Display

Yamamoto, Toshihiro; Nakajima, Yoshiki; Takei, Toshinobu; Fujisaki, Yoshihide; Fukagawa, Hirohiko; Suzuki, Masatatsu; Motomura, Genichi; Sato, Hiroto; Tokito, Shizuo; Fujikake, Hideo

doi:10.1143/jjap.50.024201

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…In addition, the hump characteristic affects the brightness in active-matrix TFT displays. Furthermore, the hysteresis effect and the difference in the SS value between forward/reverse sweep also affect the gray level in the display [22][23][24].…”

Section: Introductionmentioning

confidence: 99%

Abnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistors

Tu¹,

Chang²,

Tsao³

et al. 2020

J. Phys. D: Appl. Phys.

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Degradation in low-temperature polycrystalline-silicon thin-film transistors after electrical stress was thoroughly investigated in this work. Main channel degradation, abnormal hump generation and hysteresis appearing in the hump region can be observed after positive bias stress. Furthermore, the difference in subthreshold swing (SS) values between forward/reverse sweep is observed. The electron trapping into the gate insulator (GI) dominates the main degradation and the hump generation. Additionally, the difference in SS values which appears in the hump region is attributed to the interface traps and the hysteresis is caused by electron trapping/detrapping into GI.

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Section: Introductionmentioning

confidence: 99%

Abnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistors

Tu¹,

Chang²,

Tsao³

et al. 2020

J. Phys. D: Appl. Phys.

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Electrolyte‐Gated Transistors for Organic and Printed Electronics

Kim¹,

Hong²,

Xie³

et al. 2012

Advanced Materials

843

955

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Here we summarize recent progress in the development of electrolyte-gated transistors (EGTs) for organic and printed electronics. EGTs employ a high capacitance electrolyte as the gate insulator; the high capacitance increases drive current, lowers operating voltages, and enables new transistor architectures. Although the use of electrolytes in electronics is an old concept going back to the early days of the silicon transistor, new printable, fast-response polymer electrolytes are expanding the potential applications of EGTs in flexible, printed digital circuits, rollable displays, and conformal bioelectronic sensors. This report introduces the structure and operation mechanisms of EGTs and reviews key developments in electrolyte materials for use in printed electronics. The bulk of the article is devoted to electrical characterization of EGTs and emerging applications.

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Vertically stacked skin-like active-matrix display with ultrahigh aperture ratio

Li,

Ni,

Zhao

et al. 2024

Light Sci Appl

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Vertically stacked all-organic active-matrix organic light-emitting diodes are promising candidates for high-quality skin-like displays due to their high aperture ratio, extreme mechanical flexibility, and low-temperature processing ability. However, these displays suffer from process interferences when interconnecting functional layers made of all-organic materials. To overcome this challenge, we present an innovative integration strategy called “discrete preparation-multilayer lamination” based on microelectronic processes. In this strategy, each functional layer was prepared separately on different substrates to avoid chemical and physical damage caused by process interferences. A single interconnect layer was introduced between each vertically stacked functional layer to ensure mechanical compatibility and interconnection. Compared to the previously reported layer-by-layer preparation method, the proposed method eliminates the need for tedious protection via barrier and pixel-defining layer processing steps. Additionally, based on active-matrix display, this strategy allows multiple pixels to collectively display a pattern of “1” with an aperture ratio of 83%. Moreover, the average mobility of full-photolithographic organic thin-film transistors was 1.04 cm2 V−1 s−1, ensuring stable and uniform displays. This strategy forms the basis for the construction of vertically stacked active-matrix displays, which should facilitate the commercial development of skin-like displays in wearable electronics.

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New Driving Scheme to Improve Hysteresis Characteristics of Organic Thin Film Transistor-Driven Active-Matrix Organic Light Emitting Diode Display

Cited by 3 publications

References 12 publications

Abnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistors

Abnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistors

Electrolyte‐Gated Transistors for Organic and Printed Electronics

Vertically stacked skin-like active-matrix display with ultrahigh aperture ratio

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