New developments in Cu(In,Ga)(S, Se)2 thin film modules formed by rapid thermal processing of stacked elemental layers

Monolithic interconnection of CIGSSe solar cells by picosecond laser structuring

“…3 mm thick float glass substrates with a size of 100 mm by 100 mm from different stages of the R&D pilot line process of AVANCIS [18] were used (see Figure 1). The P1 front side and back side structuring experiments to achieve a galvanic separation of the p-contact were performed on Mo-films.…”

The CuInSe2–CuGaSe2–2CdSe system and crystal growth of the γ-solid solutions

“…These compounds are readily obtained with the p-type conductivity and, in combination with the n-type CdS, can form the p-n heterojunction necessary for the separation of photo-generated carriers. A remarkable property of chalcopyrites is their ability to form solid solutions, CuInS x Se 2−x [4,5], CuIn x Ga 1−x Se 2 [1,2,6], CuIn x Ga 1−x S y Se 2−y [1,7,8], etc., which not only allow tuning the semiconductor band gap to achieve the maximum photoconversion efficiency but also ensure the observed high tolerance to compositional variations. In this respect, the investigation of phase relations between ternary chalcopyrites together with other II-VI compounds is important to assess possible element interdiffusion at the p-n heterojunction and to extend the knowledge about solid solutions and possible intermediate phases.…”

Quasi-ternary system CuGaS2–CuInS2–2CdS

“…To increase efficiency of solar cell and to reduce their costs, both improvements in the production technology of classical silicon solar cells as well as the search for alternative materials are pursued. Promising candidates for thin film solar cells are ternary compounds CuInSe 2 CuInS 2 , CuGaSe 2 and their solid solutions CuInS x Se 2−x , CuIn x Ga 1−x Se 2 , CuIn x Ga 1−x S y Se 2−y [1][2][3][4][5][6][7][8]. These materials are intrinsic p-type semiconductors and form p-n junction with n-type CdS buffer layer.…”