New Configuration of Solid‐State Neutron Detector Made Possible with Solution‐Based Semiconductor Processing

Abstract

The unique benefit of solution‐based fabrication of solid‐state p‐n junctions is demonstrated for radiation detection. In particular, an in situ inorganic semiconductor synthesis and film deposition facilitates a novel neutron detector configuration consisting of a host inorganic semiconductor matrix impregnated with a guest neutron sensitizing material. Spectroscopic investigations of the structural order of the top detector active layer indicate that it consists of interpenetrating networks of the host semiconductor nanocrystals and sensitizing guest material that self‐assemble during film formation. The host semiconductor network exhibits a good charge transport as evidenced by steady‐state photoconductivity measurements. The detectors developed indicate high sensitivity to ionizing radiation and a demonstrated ability to detecting thermal neutrons.

Improving Performance of Organic Photodetectors by Using TCNQ Doped Copper Thiocyanate as the Anode Interfacial Layer

“…[5][6][7][8][9][10][11] However, it remains challenging to simultaneously realize high responsivity and specific detectivity for most of the OPDs, since strategies that can enhance external quantum efficiency corresponding to responsivities would inevitably enhance leakage current and noises, resulting in decreased specific detectivity. [12][13][14] To address this tradeoff issue, various strategies including interface modification, [15,16] construction of planar heterojunction structure, [17,18] and increasing the thickness of the photoactive layer [19] have been used to construct highperformance OPDs.…”