New concepts for III-V antimonide thermophotovoltaics

Mauk, Michael G.; Shellenbarger, Z.A.; Gottfried, M. I.; Cox, Jeff A.; Feyock, Bryan W.; McNeely, J. B.; DiNetta, L.C.; Mueller, R.

doi:10.1063/1.53293

Cited by 7 publications

(4 citation statements)

References 2 publications

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“…Zheng et al [51] reported on the development of p-GaSb/n-GaAs heterojunctions for TPV which may present an avenue for replacing GaSb substrates. InAs-onsilicon heteroepitaxy was investigated for TPV applications as well [52]. These alternative materials have not yet demonstrated adequate material quality for TPV cells.…”

Section: Thin Film Polycrystalline and Alternative Substratesmentioning

confidence: 99%

“…Unlike GaAs, GaP and InP, the bandgap of GaSb and InAs is evidently too low (resulting in a high thermal generation of carriers) to exhibit semi-insulating behaviour at room temperature. Several approaches to circumvent this problem have been proposed [52,[57][58][59][60] and investigated to varying degrees including AlGaAsSb isolation diodes [57,58], wide-bandgap AlGaAsSb semi-insulating layers, epitaxial lateral overgrowth on substrates masked with insulating films [52] and wafer bonding techniques that replace the conducting GaSb substrate used to seed epitaxial growth with an insulating surrogate substrate [57]. This remains an area in need of further research and development efforts.…”

Section: Prospects For Monolithic Interconnected Modules (Mim) Gasb-b...mentioning

confidence: 99%

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GaSb-related materials for TPV cells

Mauk¹,

Andreev

2003

Semicond. Sci. Technol.

129

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A survey of materials options and technologies for GaSb-related thermophotovoltaic (TPV) cells is presented, followed by an overview of device design principles and issues. This device technology has been developed for thermal-to-electric generator systems with thermal emitter infrared sources operated in the 1000-1200 • C range. Significant results for the growth, material characterization and device performance of TPV cells based on InGaAsSb, InGaSb, AlGaAsSb and InAsSbP fabricated by LPE, MOCVD, MBE and diffusion methods are reviewed. For single-junction TPV cells, epitaxial heterostructures with a ∼0.53 eV bandgap InGaAsSb base layer and wide-bandgap AlGaAsSb or GaSb window/cladding layers (all closely lattice matched to a GaSb substrate) represent the state of the art. As an alternative, a low-cost Zn-diffusion technology for fabrication of InGaAsSb p-n homojunction structures has been developed for producing the high efficiency TPV cells. External quantum yields as high as 90% at wavelengths (around 2000 nm wavelength), and response edges to about 2400 nm wavelength have been obtained with these TPV cells. Multijunction tandem TPV devices based on GaSb top cells and InGaAsSb bottom cells provide even higher performance. TPV cells based on InAsSbP, also reviewed here, have spectral responses in wavelengths in the 2.5-3.5 µm range, and thus provide a means for utilizing radiation from thermal emitters with lower temperatures.

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Section: Thin Film Polycrystalline and Alternative Substratesmentioning

confidence: 99%

Section: Prospects For Monolithic Interconnected Modules (Mim) Gasb-b...mentioning

confidence: 99%

GaSb-related materials for TPV cells

Mauk¹,

Andreev

2003

Semicond. Sci. Technol.

129

View full text Add to dashboard Cite

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“…This concept is generally referred to as photon recycling or spectral control, whereby photons with insufficient energy are reflected/recycled back to the emitter keeping it hot, and thus the energy is not lost. The notion of photon recycling has been around for many years, 13,23,[39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54] but a full system that exploits the effect has, to our knowledge, yet to be analysed in detail to quantify exactly how much benefit it can provide. Such an analysis is the subject of the ensuing discussion.…”

Section: Introductionmentioning

confidence: 99%

Thermophotovoltaics: a potential pathway to high efficiency concentrated solar power

Seyf

Henry

2016

Energy Environ. Sci.

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A high temperature thermophotovoltaic (TPV) system is modeled and its system level performance is assessed in the context of concentrated solar power (CSP) with thermal energy storage (TES). The model includes treatment of the emitter and the heat transfer fluid that draws thermal energy from the TES, which then allows for identification and prioritization of the most important TPV cell/module level properties that should be optimized to achieve maximum performance. The upper limiting efficiency for an idealized system is then calculated, which shows that TPV with TES may one day have the potential to become competitive with combined cycle turbines, but could also offer other advantages that would give CSP an advantage over fossil based alternatives. The system concept is enabled by the usage of liquid metal as a high temperature heat transfer and TES fluid. The system concept combines the great economic advantages of TES with the potential for low cost and high performance derived from TPV cells fabricated on reusable substrates, with a high reflectivity back reflector for photon recycling.

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“…"Buried" mirrors, requiring epitaxial lateral overgrowth or wafer fusion techniques, have also been proposed for GaSb-based TPV cells [9]. The "hybrid" BSR-TPV approach offers a viable method to achieve the advantages of the BSR for more conventional TPV structures in GaInAsSb-based TPV cells.…”

Section: Introductionmentioning

confidence: 99%

Hybrid Back Surface Reflector GaInAsSb Thermophotovoltaic Devices

Huang¹

2004

AIP Conference Proceedings

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Back surface reflectors have the potential to improve thermophotovoltaic (TPV) device performance though the recirculation of infrared photons. The "hybrid" back-surface reflector (BSR) TPV cell approach allows one to construct BSRs for TPV devices using conventional, high efficiency, GaInAsSb-based TPV material. The design, fabrication, and measurements of hybrid BSR-TPV cells are described. The BSR was shown to provide a 4 mV improvement in open-circuit voltage under a constant shortcircuit current, which is comparable to the 5 mV improvement theoretically predicted.Larger improvements in open-circuit voltage are expected in the future with materials improvements.

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New concepts for III-V antimonide thermophotovoltaics

Cited by 7 publications

References 2 publications

GaSb-related materials for TPV cells

GaSb-related materials for TPV cells

Thermophotovoltaics: a potential pathway to high efficiency concentrated solar power

Hybrid Back Surface Reflector GaInAsSb Thermophotovoltaic Devices

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