Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting
DOI: 10.1109/bipol.2004.1365805
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New clectro-thermal modeling method for IGBT power module

Abstract: fax: +33(0)5 61 33 62 08(3) Alstom-Transport, Rue du Docteur Guinier -BP 4,Abstract. In this paper, an original method for electro-thermal simulation is presented. The originality lies in the effective way of communication between 3D thermal modeling and IGBT-chip electrical model. This method is illustrated by IGBT modules.

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“…The volumetric calorific power (in W m −3 ) dissipated by the chip at each timestep might be approximated by the following relation: P = −4.41 10 8 − 2.04 10 8 α− 0.533I + 5.606Iα+ 9.92 10 −10 I 2 + 2.28 10 7 T [58] where T (˚C) is the temperature of the chip, I ( A m −3 ) is the volumetric current density and α (adimensional value between 0 and 1) is the cyclic ratio of the power converter. This expression has been extracted from the study defined with the electrothermal chip model developed by (Mussard et al, 2004). For each timestep, we perform an electric calculation followed by a thermal one.…”
Section: Electro-thermal Modelmentioning
confidence: 99%
“…The volumetric calorific power (in W m −3 ) dissipated by the chip at each timestep might be approximated by the following relation: P = −4.41 10 8 − 2.04 10 8 α− 0.533I + 5.606Iα+ 9.92 10 −10 I 2 + 2.28 10 7 T [58] where T (˚C) is the temperature of the chip, I ( A m −3 ) is the volumetric current density and α (adimensional value between 0 and 1) is the cyclic ratio of the power converter. This expression has been extracted from the study defined with the electrothermal chip model developed by (Mussard et al, 2004). For each timestep, we perform an electric calculation followed by a thermal one.…”
Section: Electro-thermal Modelmentioning
confidence: 99%