New Circuit Topology for System-Level Reliability of GaN

Lin, Ming-Cheng; Chang, Wen-Che; Wu, Haw-Yun; Lansbergen, G. P.; Kwan, M.-H.; Yu, J. P.; Wu, C. S.; Tsai, Chien‐Hsiung; Tuan, H.C.; Kalnitsky, A.

doi:10.1109/ispsd.2019.8757683

Cited by 10 publications

(2 citation statements)

References 3 publications

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“…Examples of such switching stress include the hard-switched boost converter, double-pulse-based setup, and soft-switched converters. In some context, such test is named the HTOL (High Temperature Operating Life) test, and the test circuit topologies include a boost converter [32] and the halfbridge converters with RC load or RL load [57].…”

Section: Power Cyclingmentioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and form factor of power electronics. However, the material composition, architecture and physics of many GaN devices are significantly different from silicon and silicon carbide devices. These distinctions result in many unique stability, reliability and robustness issues facing GaN power devices. This paper reviews the current understanding of these issues, particularly those related to dynamic switching, and their impacts on system performance. Instead of delving into reliability physics, this paper intends to provide power electronics engineers the necessary information for deploying GaN devices in existing and emerging applications, as well as provide references for the qualification evaluations of GaN power devices. The issues covered in this paper include the dynamic instability of device parameters (e.g., on-resistance, threshold voltage, output capacitance), the device robustness in avalanche, overvoltage and short-circuit conditions, the device's switching reliability and lifetime, as well as the device's ruggedness under radiation and extreme (cryogenic and elevated) temperatures. Knowledge gaps and immediate research opportunities in the relevant fields are also discussed. 1

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Section: Power Cyclingmentioning

confidence: 99%

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Kozak

Zhang

Porter

et al. 2023

IEEE Trans. Power Electron.

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“…GaN-on-Si lateral high electron mobility transistors (HEMTs) have been successfully used for producing high efficiency converter applications with compact size, owing to their superior device properties such as low on-resistance (R on ), high breakdown voltage (BV), and high switching frequency. Since the past decade, industrial companies and academic institutes have made rapid progresses in device design, epitaxial growth, processing technology, packaging technology, device reliability improvement, and gate driving techniques, GaN-on-Si lateral heterojunction power devices have been commercialized [1][2][3][4][5][6][7][8]. Although GaN-on-Si power devices have been successfully adapted to power conversion systems, the major challenges to further popularize GaN-on-Si power devices are listed in the following: (a) making cost-competitive to conventional Si power MOSFETs, (b) verifying system level reliability, (c) mitigating the electromagnetic interference (EMI) generated by power converters with GaN HEMTs without compromising the advantages of low switching loss.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application

Wong

Hao

Chou

et al. 2021

Semicond. Sci. Technol.

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In this paper, we discuss possible solutions to overcome the critical issues for GaN-on-Si power device popularization including cost competitiveness to Si power MOSFETs, system level reliability verification, and electromagnetic interference (EMI) mitigation at high switching frequency without compromising the switching loss. Both an advanced epitaxy technology and a comprehensive power device technology platform of 200 mm GaN-on-Si high electron mobility transistors (HEMTs) for mass production are presented. A novel strain engineering is reported to realize enhancement-mode HEMTs with ultralow specific on-resistance. The Si based Joint Electron Device Engineering Council reliability test, Dynamic High Temperature Operating Life, and switching accelerated lifetime test were carried out to evaluate the device reliability and lifetime. It is proved that our GaN device is robust and stable in power conversion applications. A balancing technique to mitigate EMI of the high switching frequency GaN power converter is demonstrated.

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Reliability Issues in GaN Electronic Devices

Ťapajna

Koller

2020

Nitride Semiconductor Technology

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New Circuit Topology for System-Level Reliability of GaN

Cited by 10 publications

References 3 publications

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Comprehensive GaN-on-Si power device platform: epitaxy, device, reliability and application

Reliability Issues in GaN Electronic Devices

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