New calibration method for UV–VIS photothermal deflection spectroscopy set-up

Sancho‐Parramon, Jordi; Ferré‐Borrull, Josep; Bosch, Salvador; Krasilnikova, Anna; Bulı́ř, J.

doi:10.1016/j.apsusc.2006.06.010

Cited by 8 publications

(3 citation statements)

References 16 publications

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“…A further experimental study will be made to compare the absorption losses for multilayer stacks to the absorptance calculated from the spectral characterization. Many techniques such as the photothermal deflection technique [65], the photothermal common path interferometry [66,67] and lock-in detection [68] allow the accurate measurement of very small absorption losses. High reflectivity mirrors for quantum communication applications usually require surface roughness between 0.2 nm and 0.3 nm in order to reduce the scatter losses [60].…”

Section: Discussion and Future Workmentioning

confidence: 99%

Comparative study of dielectric coating materials for micro-cavity applications

Sidqi

Clark

Buller

et al. 2019

Opt. Mater. Express

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We study the potential of common dielectric coating materials used for the fabrication of high reflectance mirrors in micro-cavity devices used in the visible region. We examine materials grown using E-beam and thermal evaporation and magnetron sputtering. The refractive indices and the extinction coefficients of the coatings were calculated from transmission and reflectance spectrophotometric data. The surface roughness of single layer coatings was measured using atomic force microscopy and the scatter of the thin film coatings was approximated from roughness measurements.

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Section: Discussion and Future Workmentioning

confidence: 99%

Comparative study of dielectric coating materials for micro-cavity applications

Sidqi

Clark

Buller

et al. 2019

Opt. Mater. Express

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“…14 Figure 2 ͑top͒ illustrates the obtained absorption spectra of Si/ SiO 2 layer stacks with 1 ϫ 60, 12ϫ 5, 20ϫ 3, and 30ϫ 2 nm Si wells. 14 Figure 2 ͑top͒ illustrates the obtained absorption spectra of Si/ SiO 2 layer stacks with 1 ϫ 60, 12ϫ 5, 20ϫ 3, and 30ϫ 2 nm Si wells.…”

mentioning

confidence: 99%

Lateral Si∕SiO2 quantum well solar cells

Rölver

Berghoff

Bätzner

et al. 2008

Applied Physics Letters

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“…Carrier transport mechanisms in semiconductors are widely investigated by many techniques [1][2][3][4][5] such as time resolved photoconductivity, photoluminescence and photoacoustic processes. Of the several techniques available for semiconductor characterization, photothermal deflection PTD [5][6][7][8][9] is one of the most widely used. In this case, the sample is usually irradiated by a modulated light beam.…”

Section: Introductionmentioning

confidence: 99%

Photothermal Investigation of Te-Doped Bulk Gasb: Correlation between Non-Radiative Lifetime and Thermal Diffusivity

Saadallah¹,

Abroug²,

Yacoubi³

2012

AJCMP

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Photothermal deflection PTD is used in order to reveal the influence of Te doping on non radiative carrier lifetime for GaSb bulk sample when illuminated by a modulated and monochromatic light beam. Theoretical simulations are obtained from an adapted theoretical model, based on the resolution of both heat and carrier diffusion equations. Auger recombination coefficient obtained from the linear relation between lifetime and the inverse of squared concentration is in agreement with literature. Moreover, it is found that low n-doping reduces the surface recombination velocity S because of dangling bonds neutralisation at the surface. However for higher doping concentration, S is enhanced by Te doping.

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New calibration method for UV–VIS photothermal deflection spectroscopy set-up

Cited by 8 publications

References 16 publications

Comparative study of dielectric coating materials for micro-cavity applications

Comparative study of dielectric coating materials for micro-cavity applications

Lateral Si∕SiO2 quantum well solar cells

Photothermal Investigation of Te-Doped Bulk Gasb: Correlation between Non-Radiative Lifetime and Thermal Diffusivity

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