2021
DOI: 10.1016/j.dyepig.2021.109756
|View full text |Cite
|
Sign up to set email alerts
|

New benzodithiophene fused electron acceptors for benzodithiophene-based polymer

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
3
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
1

Relationship

1
0

Authors

Journals

citations
Cited by 1 publication
(3 citation statements)
references
References 50 publications
0
3
0
Order By: Relevance
“…These results suggest that utilizing SnO 2 : u ‐PEIs as the ETL materials leads to superior efficiency in exciton dissociation and charge collection in the devices, resulting in an enhanced FF. [ 67,69 ]…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…These results suggest that utilizing SnO 2 : u ‐PEIs as the ETL materials leads to superior efficiency in exciton dissociation and charge collection in the devices, resulting in an enhanced FF. [ 67,69 ]…”
Section: Resultsmentioning
confidence: 99%
“…[64,65] In Figure 4e, J ph increases linearly with an increase in V eff , eventually reaching saturation at a high V eff value, which indicates the complete dissociation of all excitons into free charge carriers. [66,67] The exciton dissociation probability (P diss ) is expressed by P diss = J ph, sc /J sat , where J ph, sc represents the photocurrent density under the short-circuit condition and J sat represents the saturated current density at a high V eff . [68,69] The devices incorporating SnO 2 :u-PEIs exhibit a P diss of 96.7%, clearly surpassing that of bare SnO 2 (94.8%) and slightly exceeding that of SnO 2 :PEI (96.5%).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation