New approach to the growth of SiO₂ nanowires using Sn catalyst on Si substrate

Abstract

Silica nanowires were synthesized from mixture monosilane with hydrogen by gas‐jet electron beam plasma chemical vapor deposition method for the first time. The synthesis was carried out on silicon substrate with up to micrometer‐sized particles of Sn catalyst. SEM observations show that this method provides different morphology of the nanowires and catalyst. Oriented arrays of silica nanowires bunches (microropes) were synthesized in the area corresponding to the mixture jet axis. Cocoons‐like, bamboo‐like, and jellyfish‐like morphology was observed in the area corresponding to periphery of the jet. Probably there was realised vapor‐liquid‐solid (VLS) growth mechanism, where multiple nanowires grow simultaneously from the surface of one catalyst drop. The growth rate of the microropes is about 25 nm/s at synthesis temperature 330 °C. Possible growth model has been suggested in order to explain the results. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Synthesis of silicon oxide nanowires by the GJ EBP CVD method using different diluent gases

“…Therefore, the synthesis conditions in the substrate regions corresponding to the axis of the jet and its periphery are significantly different. Nanostructures synthesized in these regions are also significantly different in morphology . In this study, we investigated nanostructures grown in the substrate region which corresponds to the jet axis.…”

Birth of silicon nanowires covered with protective insulating blanket

“…Nevertheless, until now, these methods are used either to produce SiNWs, SiO x NWs or silica NWs. [3,[11][12][13] This work demonstrates the growth of Si-SiO x NWs simultaneously without additional process steps in large quantities, which are uniform, well defined, and better aligned. This process does not pose problems associated with non-conformal coating due to the shadowing of NWs and allows the optimization and controlled growth with a mature and already available PECVD technique at low temperatures (300°C).…”

“…[15][16][17] In contrary, they are used also for the growth of silica (SiO x ) and SnO 2 NWs. [11,18] It is shown that, 5 min H 2 -plasma at temperatures <400°C, metal NPs are formed. However, this phenomenon is not observed in this work for SiNWs grown from FTO.…”

Influence of thin fluoropolymer film deposition on wettability of the silicon oxide nanowires array

“…Silicon oxide nanowires were synthesized from mixture monosilane-argon (40 sccm) with gas diluent hydrogen (600 sccm) by gas-jet electron beam plasma CVD method [6,7]. Oxygen (3 sccm) was supplied directly into the vacuum chamber.…”