New approach to the design and the fabrication of THz Schottky barrier diodes

Jelenski, A.; Grüb, A.; Krozer, Viktor; Hartnagel, H.L.

doi:10.1109/22.231645

Cited by 40 publications

(18 citation statements)

References 17 publications

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“…Furthermore, we show that the equivalent noise circuit previously reported for these contacts [5][6][7] can be obtained as a limit of our model in some particular limiting cases. The a͒ Electronic mail: gabriel@ffn.ub.es equivalent-circuit parameters, such as the junction resistance, the series resistance, etc., acquire closed analytical formulas valid in the whole range of voltages including the crossover between the shot noise and thermal noise limits.…”

Section: Introductionmentioning

confidence: 90%

“…It has been argued that this additional term could explain some discrepancies observed between experimental measurements or MC simulations and the results of the equivalent circuit model precisely under near flat-band conditions. It should be pointed out that mm-wave and sub-mmwave mixers operate precisely at this regime, 7 so that our theory can be useful for the local-noise analysis of these devices in order to improve their performance.…”

Section: Discussionmentioning

confidence: 99%

“…[2][3][4] In recent years, however, special attention has been paid to the characterization of the noise properties of Schottky barrier diodes. [5][6][7][8] The main approach currently used to interpret the experimental noisemeasurement results is the phenomenological equivalent noise circuit technique. [5][6][7] Under this approach the diode is characterized by means of the corresponding equivalent circuit.…”

Section: Introductionmentioning

confidence: 99%

“…[5][6][7][8] The main approach currently used to interpret the experimental noisemeasurement results is the phenomenological equivalent noise circuit technique. [5][6][7] Under this approach the diode is characterized by means of the corresponding equivalent circuit. Hence, by associating each resistive element of the circuit with different noise sources ͑shot noise for the junction resistance, thermal noise for the series resistance, etc.͒ the total noise of the device is evaluated.…”

Section: Introductionmentioning

confidence: 99%

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Local noise analysis of a Schottky contact: Combined thermionic-emission–diffusion theory

Gomila

Bulashenko

Rubı́

1998

Journal of Applied Physics

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A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission-diffusion theory is presented. The theory incorporates both the noise induced by the diffusion of carriers through the semiconductor and the noise induced by the thermionic emission of carriers across the metal-semiconductor interface. Closed analytical formulas are derived for the junction resistance, series resistance, and contributions to the net noise localized in different space regions of the diode, all valid in the whole range of applied biases. An additional contribution to the voltage-noise spectral density is identified, whose origin may be traced back to the cross correlation between the voltage-noise sources associated with the junction resistance and those for the series resistance. It is argued that an inclusion of the cross-correlation term as a new element in the existing equivalent circuit models of Schottky diodes could explain the discrepancies between these models and experimental measurements or Monte Carlo simulations.

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Section: Introductionmentioning

confidence: 90%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Local noise analysis of a Schottky contact: Combined thermionic-emission–diffusion theory

Gomila

Bulashenko

Rubı́

1998

Journal of Applied Physics

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“…1 In recent years, for instance, THz Schottky barrier diodes have been the subject of considerable attention. [1][2][3][4][5][6] Currently, the important point is how to improve their realization and technology to obtain still better results at higher frequencies. To this respect, much effort has been devoted to reduce the diode thickness, thereby reducing the parasitic resistance loses in the bulk region maintaining sufficient nonlinearity characteristics for applications.…”

Section: Introductionmentioning

confidence: 99%

Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodes

Gomila

Bulashenko

1999

Journal of Applied Physics

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An analytical theory to describe the combined effects of the epitaxial layer thickness and the ohmic contact on the noise properties of Schottky barrier diodes is presented. The theory, which provides information on both the local and the global noise properties, takes into account the finite size of the epitaxial layer and the effects of the back ohmic contact, and applies to the whole range of applied bias. It is shown that by scaling down the epitaxial layer thickness, the current regime in which the noise temperature displays a shot-noise-like behavior increases at the cost of reducing the current range in which the thermal-noise-like behavior dominates. This improvement in noise temperature is limited by the effects of the ohmic contact, which appear for large currents. The theory is formulated on general trends, allowing its application to the noise analysis of other semiconductor devices operating under strongly inhomogeneous distributions of the electric field and charge concentrations.

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Calculation of the power capabilities of HBT amplifiers based on a new physical HBT model

Krozer

Ruppert

Schüßler

et al. 1996

Int. J. Microw. Mill.-Wave Comput.-Aided Eng.

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A novel model for the simulation of the microwave power capabilities of HBTs is presented. The model is based on physical analytical formulation of the terminal currents as functions of the base‐emitter and base‐collector voltages. It takes into account the unequal thermal distribution of temperature for multifinger HBT devices, the impact ionization, tunnelling, recombination currents, etc. From the simulation of multi‐finger transistor structures it can be concluded that high thermal device resistances are detrimental for power performance, because of the unequal distribution of temperature and, hence, base current in the HBT structure. In can also be concluded that the input and output reflection coefficients are insensitive to temperature variation. Finally, it has been shown theoretically and experimentally that the breakdown voltage increases slightly with increasing operating temperature. © 1996 John Wiley & Sons, Inc.

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New approach to the design and the fabrication of THz Schottky barrier diodes

Cited by 40 publications

References 17 publications

Local noise analysis of a Schottky contact: Combined thermionic-emission–diffusion theory

Local noise analysis of a Schottky contact: Combined thermionic-emission–diffusion theory

Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodes

Calculation of the power capabilities of HBT amplifiers based on a new physical HBT model

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