New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles

Hales, Joel M.; Cressler, John D.; McMorrow, D.; Khachatrian, Ani; Büchner, S.; Warner, Jeffrey H.; Ildefonso, Adrian; Tzintzarov, George N.; Nergui, Delgermaa; Monahan, Daniele M.; LaLumondiere, Stephen

doi:10.1109/tns.2019.2950431

Cited by 19 publications

(19 citation statements)

References 30 publications

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“…The later technological developments of femtosecond lasers as well as near‐infrared lasers enabled to irradiate the device from the silicon substrate (i.e., the backside) by two‐photon absorption—and, consequently, to generate free carriers with a remarkable spatial resolution. [ 119–134 ] The plasma production close to the logic gates of the irradiated device implies that some of the free carriers are able to migrate through a tunnel oxide so that the logic state of the microelectronic component (e.g., flash memory, photodiode) is modified in a stable manner after irradiation.…”

Section: Self‐limited Excitation With Ultrashort Pulsesmentioning

confidence: 99%

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

Chambonneau

Grojo

Tokel

et al. 2021

Laser & Photonics Reviews

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Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond‐pulse trains, and surface‐seeded bulk modifications have allowed addressing numerous applications.

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Section: Self‐limited Excitation With Ultrashort Pulsesmentioning

confidence: 99%

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

Chambonneau

Grojo

Tokel

et al. 2021

Laser & Photonics Reviews

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“…Data (read error count) from the host software was extracted, and the data points were plotted as a curve of soft error number with laser energy, as shown in Figure 6. When the pulsed laser energy is 814 pJ (corresponding to the LET value [6][7][8] of 37 MeV•cm 2 /mg), soft errors due to SEE start to be generated, so the SEU threshold for this SRAM device is 814 pJ (±81 pJ). With increasing laser energy, the number of errors increases.…”

Section: Soft Error Numbermentioning

confidence: 99%

Experimental Study on the Space Electrostatic Discharge Effect and the Single Event Effect of SRAM Devices for Satellites

et al. 2022

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Space Electrostatic Discharge Effect (SESD) and Single Event Effect (SEE) are two major space environmental factors that cause spacecraft failure. Previous studies have established that both can lead to soft errors such as upset of memory cells. An ESD generator and a pulsed laser experimental facility were used to test a low-power asynchronous timing monolithic SRAM. The characteristics of soft error number, single/multi-bit upsets, and supply current values were compared for similarities and differences. The test revealed that SEE-induced soft errors were mainly single-bit upsets (SBU), whereas SESD-induced soft errors were predominantly multi-bit upsets (MBU). Additionally, when soft errors occur in the circuits, the current of the power supply drops, which enables the device to be evaluated by monitoring the current value. This study provides experimental support for distinguishing device errors caused by these two effects, as well as references for further accurate identification of in-orbit faults and corresponding protection design.

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“…There has been significant effort to use pulsed lasers and focused X-rays to generate SEEs in a manner akin to heavy ions, while offering refined spatial and temporal control of charge generation within devices. [54][55][56][57][58] Charge generation profiles for the three testing methods vary in the axial and radial dimensions. Heavy ions typically have linear charge generation profiles along the axial direction in the device.…”

Section: See Testingmentioning

confidence: 99%

“…By contrast, typical focused femtosecond pulsed-laser systems use optics that produce a charge generation profile described by single photon absorption (SPA) or Gaussian two-photon absorption (TPA). [54][55][56][57][58] If laser photon energy is above material bandgap then it is a SPA process. If laser photon energy is below bandgap then it is TPA process.…”

Section: See Testingmentioning

confidence: 99%

Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics

Pearton

Haque

Khachatrian

et al. 2021

ECS J. Solid State Sci. Technol.

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Radiation effects have a critical impact on the reliability of SiC and GaN power electronics and must be understood for space and avionics applications involving exposure to various types of ionizing and non-ionizing radiation. While these semiconductors have shown excellent radiation hardness to total ionizing dose and displacement damage effects, SiC and GaN power devices are susceptible to degradation from single event effects (SEE) resulting from the high-energy, heavy-ion space radiation environment (galactic cosmic rays) that cannot be shielded. This degradation occurs at <50% of the rated operating voltage, requiring operation of SiC MOSFETs and rectifiers at de-rated voltages. SEE caused by terrestrial cosmic radiation (neutrons) have also been identified by industry as a limiting factor for the use of SiC-based electronics in aircraft. In this paper we review prospects and opportunities for a comprehensive and systematic assessment of these materials to understand the origin and possible mitigation of these effects.

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New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles

Cited by 19 publications

References 30 publications

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

In‐Volume Laser Direct Writing of Silicon—Challenges and Opportunities

Experimental Study on the Space Electrostatic Discharge Effect and the Single Event Effect of SRAM Devices for Satellites

Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics

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