New a-Si/c-Si and a-SiC/c-Si based optically controlled switching devices

Abstract

The fabrication and characteristics of Al/a-Sijcsi(p)/GSi(n+)/Al and Ai/aSiC/c-Si(p)/c-Si(n')/Al switches are presented. Both switches use a non-hydrogenated amorphous thin film. The devices can be optically controlled, and exhibit forward breakover voltages (VeF) of 120-160 V. Their behaviour resembles that of a thyristor. A simple model for the device operation is also presented and discussed for the first time.

Current pulses and high-frequency oscillations in a-Si/Si(p)/Si(n) heterojunction device

“…To avoid this discrepancy and to explain the decaying front of the collector current pulses, we took into account both the modified thyristor model proposed in [8] and the formation of a narrow layer within the a-Si collector, adjacent to the J2 interface exhibiting 'relaxation behaviour', very similar to that reported in [16] and [17]. Injection of carriers of one sign into a 'relaxation semiconductor' does not result in an increased concentration of carriers of the opposite sign, in contrast to a conventional 'lifetime semiconductor', but in their decrease.…”

“…Two-and three-terminal Me/a-Si:H/Me [1][2][3] and a-Si:H/c-Si, a-Si/c-Si, a-SiC/c-Si [3][4][5][6][7] heterojunction based devices are studied as memory switches with low and high switching voltages. Taking into account the advantages of amorphous Si films, such as low-temperature fabrication and compatibility with the standard bipolar process [7], as well as the ultrafast recombination and trapping [8,9], these devices were found to be promising as high-speed switches [8].…”

Methanol adsorption on the Si(100)-2 × 1 surface: a first-principles calculation

“…The adsorption of hydrocarbons on silicon surfaces has lately received more and more attention due to possible technological applications [1,2]. Earlier studies of small molecules adsorbed on silicon surfaces with different orientations have given way to experimental and theoretical investigations including more and more complex adsorbates.…”

New High‐Speed a‐Si/c‐Si‐ and a‐SiC/c‐Si‐Based Switches

“…The switches were fabricated using three different types of c-Si(p)/c-Si(n+) [11,12] the R.E sputtering conditions during deposition.…”