New 3C Silicon Carbide on Silicon Hetero-Junction Solar Cells for UV Collection enhancement

Touré, Moussa; Bérenguier, Baptiste; Ottaviani, Laurent; Pasquinelli, M.; Palais, Olivier; Lauro, Paolo Di; Portail, Marc; Chenot, Sébastien; Wood, Thomas; Kobor, Diouma

doi:10.1557/opl.2014.611

Cited by 3 publications

(5 citation statements)

References 10 publications

(10 reference statements)

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“…The parameters of the cells are presented in table 1. Table 2 shows the previous results obtained by Moussa and al, with diodes based on 2 um SiC emitters and distinct doping levels (from 4.10 17 cm -3 to 3.10 19 cm -3 ) and Ni/Au layer as ohmic contact on front side (8). One wafer with 2 μm SiC layer and a specific doping value of 10 19 cm -3 was also developed by CRHEA.…”

Section: Figure 3: Current Voltage Characteristicsmentioning

confidence: 99%

Simulation and optimization of the nSiC layer’s thickness in a nSiC/Si photovoltaic cell

Kabe¹,

Lare

Ottaviani

et al. 2019

Mat & Dev

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Simulations of the emitter layer in 3C-SiC heterostructure solar cells were performed by means of SCAPS to model the optimal thickness and predict the influence on cell’s behaviour. Then, the cells have been elaborated by chemical vapor deposition and characterized. The opto-electrical measurements showed an improvement of the absorption of photons in the short wavelengths thanks to the thin layer of the emitter, and the non-degradation in bulk of the base cell. On the front side, the using of Ti/Au contacts also leads to an improvement in the absorption of photons thanks to the low series resistance.

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Section: Figure 3: Current Voltage Characteristicsmentioning

confidence: 99%

Simulation and optimization of the nSiC layer’s thickness in a nSiC/Si photovoltaic cell

Kabe¹,

Lare

Ottaviani

et al. 2019

Mat & Dev

Self Cite

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“…Several theoretical and experimental works have underlined the excellent efficiency of the SiC based solar cell and many structures have been investigated [13,14,15,16]. One of these structures is based on cubic-SiC polytype, commonly known 3C-SiC or 𝛽 -SiC.…”

Section: Overview On the Sic Based Solar Cellmentioning

confidence: 99%

“…M. Toure et al studied a structure based on cubic silicon carbide. It's a bilayer solar cell of 3C-SiC on a silicon substrate with optimal PCE of 19.98% [15]. The properties of SiC/SixC1-x solar cell has been also investigated by controlling the silicon and carbon content (stoechiometric coefficient) of the SiC.…”

Section: Overview On the Sic Based Solar Cellmentioning

confidence: 99%

Light intensity and temperature effect on the DC parameters of optimized nc-3C-Sic:H Based solar cell

Belhadji¹

2023

J. Fundam and Appl Sci.

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The Hydrogenated nanocrystalline cubic silicon carbide (nc-3C-Si:H) based solar cell with interesting efficiency, find her place promoted in photovoltaic applications. To improve the sunlight absorption and its electrical performances, the structure of the solar cell can be optimized, combining new materials to form multi-layers solar cells. In this context, the nc-3C-SiC:H, having a wide band gap, excellent optical, electrical and structural properties is used as wide bandgap absorber layer. In this work, we report a theoretical study of new optimized nc-3C-SiC:H/ i-a-Si:H/ a-Si:H/ µc-Si solar cell using the SCAPS one dimension program. We investigate the temperature and incident light intensity effect on the DC parameters of the solar cell. For the proposed structure, optimal power conversion efficiency (PCE) of 16.89% is registered under AM1.5G spectrum at room temperature.

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“…High development degree of silicon technology, lower cost of fabrication and non-toxicity are good arguments to follow this way. In case of tandem cell, the optimal band gap for the top junction would be between 1.6 and 1.8 eV, but few materials compatible with silicon are presently available meeting this requirement (Toure et al, 2014).…”

Section: Introductionmentioning

confidence: 99%

“…Toure et al (Toure et al, 2014) have done a first study which allowed us to evaluate the potential of the heterojunction 3C-SiC / Si for a photovoltaic application. The conclusion of this study is that the performances of the cells are deteriorated by SRH recombination phenomena which hut the current density, the opencircuit voltage as well as the quantum yield in the infrared domain.…”

Section: Introductionmentioning

confidence: 99%

Study by numerical simulation of a PN solar cell in 3C-SiC / Si

Touré¹,

Bérenguier²,

Kobor³

et al. 2018

Afr. J. Environ. Sci. Technol.

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The optimization of the solar cell includes the study of the influence of parameters such as cell thickness, doping levels and profiles, contact configuration and optical confinement on the output to obtain a structure leading to the best performance. The optimal parameters depend on the structure of the solar cell, the quality of the substrate material (lifetime, mobility), the quality of the ohmic contacts, the speed of recombination, etc. The cell to be studied has a structure composed of an n-type gap material (Eg 3C-SiC =2.36 eV) as a window layer and a small gap material (Eg Si = 1.12eV) as a substrate. The manufacture of a cell based on 3C-SiC / Si is expensive because 3C-SiC is a material that does not exist in the natural state, hence the interest of numerical simulation in order to determine the most important parameters for the operation of heterojunction solar cells (3C-SiC / Si), to minimize losses and to optimize the physical and geometrical parameters of the cell in order to obtain maximum efficiency. The most important recombination sources are Shockley-Read-Hall recombinations in the substrate, Auger recombinations and recombinations on the front of the cell. To study the influence of the various parameters, we first defined a reference solar cell with a set of fixed parameters, then we varied the parameters one by one (the others remaining fixed) in order to analyze their influences. On the characteristics of the solar cell, we obtained a Voc of 0.633 6 V, a short-circuit current of 37.82 mA / cm 2 , a form factor of 83.38%, which gives us a yield of 19.98%.

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New 3C Silicon Carbide on Silicon Hetero-Junction Solar Cells for UV Collection enhancement

Cited by 3 publications

References 10 publications

Simulation and optimization of the nSiC layer’s thickness in a nSiC/Si photovoltaic cell

Simulation and optimization of the nSiC layer’s thickness in a nSiC/Si photovoltaic cell

Light intensity and temperature effect on the DC parameters of optimized nc-3C-Sic:H Based solar cell

Study by numerical simulation of a PN solar cell in 3C-SiC / Si

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