New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices

Levine, B. F.; Choi, K. K.; Bethea, C. G.; Walker, John F.; Malik, R. J.

doi:10.1063/1.97928

Cited by 542 publications

(145 citation statements)

References 16 publications

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“…[8][9][10][11][12][13] These devices use intersubband (ISB) transitions in a semiconductor QW superlattice (mainly n-type doped GaAs/AlGaAs) to generate photocurrent, in a similar manner to their mid-infrared counterparts. 10,14 Several different geometries have been realized to couple light into THz QWIPs, in order to fulfill the ISB polarization selection rule: 15 these include via substrate coupling through a 45 polished facet, 8,14 diffraction gratings, 13,16,17 and metamaterials. 18 Recently, we demonstrated an antenna-coupled microcavity geometry for QWIPs operating at a wavelength of 9 lm which enables an improved light coupling, a reduced dark current, and a higher temperature performance.…”

mentioning

confidence: 99%

Patch antenna terahertz photodetectors

Palaferri

Todorov

Chen

et al. 2015

Applied Physics Letters

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We report on the implementation of 5 THz quantum well photodetector exploiting a patch antenna cavity array. The benefit of our plasmonic architecture on the detector performance is assessed by comparing it with detectors made using the same quantum well absorbing region, but processed into a standard 45° polished facet mesa. Our results demonstrate a clear improvement in responsivity, polarization insensitivity, and background limited performance. Peak detectivities in excess of 5 × 1012 cmHz1/2/W have been obtained, a value comparable with that of the best cryogenic cooled bolometers.

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mentioning

confidence: 99%

Patch antenna terahertz photodetectors

Palaferri

Todorov

Chen

et al. 2015

Applied Physics Letters

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“…The final fabricated pixel size, shown in Fig. 1 2 . The diffractive element design utilized for each pixel consisted of an array of GaAs square rings, which are also shown in Fig.…”

Section: R-qwip Structure and Pixel Detailsmentioning

confidence: 99%

“…Monopolizing upon this proposed idea and increased maturity of the III-V material system, the quantum well infrared photodetector (QWIP) was finally realized [2]. In parallel with the success and limitations of III-V AlGaAs/(In)GaAs QWIP technology, the infrared (IR) research community has also maintained an interest in other III-V technologies such as InAs/(In)GaSb type-II strained layer superlattices (SLS) and InAs/InAsSb Ga-free materials [3,4].…”

Section: Introductionmentioning

confidence: 99%

Progress in resonator quantum well infrared photodetector (R-QWIP) focal plane arrays

DeCuir

Choi

Sun

et al. 2015

Infrared Physics & Technology

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h i g h l i g h t sWe report on the performance of a 640 Â 512 resonant quantum well infrared photodetector (R-QWIP) focal plane array (FPA). We report on the conversion efficiency and quantum efficiency as a function of bias and temperature. We report on the dark current and Noise Equivalent Temperature Difference as a function of bias and temperature. a r t i c l e i n f o t r a c tIn this work, the performance of a 640 Â 512 long-wavelength resonant quantum well infrared photodetector (R-QWIP) focal plane array (FPA) was evaluated as a function of operating temperature, bias, and photon flux using an F/2.2 optic. From these FPA measurements an assessment of the dark current, noise, conversion efficiency and noise-equivalent temperature difference is provided herein. Histogram results are used to support a statistical interpretation of operability and non-uniformity across the R-QWIP FPA. In addition, single pixel devices fabricated from the same wafer lot enabled supplemental noise gain and spectral response measurements. The spectral response of this R-QWIP structure was confirmed to peak around 8.3 microns with a spectral bandwidth or approximately 1 micron (full-width half maximum) and the noise gain measurements were used to provide an estimation of the expected external quantum efficiency (conversion efficiency = quantum efficiency ⁄ gain).Published by Elsevier B.V.

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“…The first infrared photodetector based on intersubband transitions in semiconductor quantum wells was demonstrated in 1987 [Levine et al 1987]. Since then, a lot of research has been put forward to develop this technology further, and today large format and high uniformity GaAs focal plane arrays based on such technology are already available on the market [Goldberg et al 2005].…”

Section: Introductionmentioning

confidence: 99%

Software tools for the design and analysis of quantum well, quantum wire and quantum dot devices

Tanaka¹,

Passaro²,

Abe³

et al. 2007

2007 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference

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Abstract. In this work we present a set of computer codes based on the Finite Element Method intended to help the design and the analysis of infrared photodetectors based on semiconductor quantum wells and quantum dots. Our codes are capable of handling both arbitrary potential and effective mass profiles and they take into account the strain induced by lattice mismatch between different materials. In the present version, the computer codes allow the computation of eigenvalues, eigenvectors and oscillator strain for optical transitions.

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New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices

Cited by 542 publications

References 16 publications

Patch antenna terahertz photodetectors

Patch antenna terahertz photodetectors

Progress in resonator quantum well infrared photodetector (R-QWIP) focal plane arrays

Software tools for the design and analysis of quantum well, quantum wire and quantum dot devices

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