A remarkable several times increase (up to 10 K) of the superconducting critical temperature Tc has been observed in point contacts created on the base of single crystals AFe2As2 (A = K, Cs, Rb). Possible reasons for such a Tc increase in point contacts are briefly discussed on a qualitative level. Among them, it is most likely attributed to interfacial carrier doping and/or uniaxial nonhomogeneous pressure arising when the contact is created.